Infineon Technologies IRGP35B60PDPBF

Name: IRGP35B60PDPBF
Brand: Infineon Technologies
SKU: 2494651-IRGP35B60PDPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRGP35B60PDPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2494651-IRGP35B60PDPBF

Description:: IGBT 600V 60A 308W TO247AC

ECAD Model:

Datasheet:: IRGP35B60PDPbF

Specifications

Infineon Technologies IRGP35B60PDPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP35B60PDPBF.

Factory Lead Time
14 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2000
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY, LOW CONDUCTION LOSS
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
308W
Current Rating
60A
Number of Elements
1
Element Configuration
Single
Power Dissipation
308W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
26 ns
Transistor Application
POWER CONTROL
Rise Time
6ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
110 ns
Collector Emitter Voltage (VCEO)
2.55V
Max Collector Current
60A
Reverse Recovery Time
42 ns
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.85V
Turn On Time
34 ns
Test Condition
390V, 22A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.55V @ 15V, 35A
Turn Off Time-Nom (toff)
142 ns
IGBT Type
NPT
Gate Charge
160nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
26ns/110ns
Switching Energy
220μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
5V
Height
20.7mm
Length
15.87mm
Width
5.3086mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

Description
The IRGP35B60PDPBF is a warp2 series IGBT with an ultrafast soft recovery diode. What is the purpose of a recovery diode? In most cases, rapid recovery diodes are employed for rectification. A low-frequency AC (sine) signal becomes a DC signal when it is converted. The time duration of a low-frequency signal is long. This indicates that the signal will take longer to complete its cycle.

Features
? Minimal Tail Current ? HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode ? Tighter Distribution of Parameters ? Higher Reliability ? NPT Technology, Positive Temperature Coefficient ? Lower VCE(SAT) ? Lower Parasitic Capacitances

Applications
? Uninterruptable Power Supplies ? Consumer Electronics Power Supplies ? Lead-Free ? Telecom and Server SMPS ? PFC and ZVS SMPS Circuits

IRGP35B60PDPBF More Descriptions

Trans IGBT Chip N-CH 600V 60A 308000mW 3-Pin(3 Tab) TO-247AC Tube
IRGP35B60PDPBF Series 600 V 34 A N-Channel UltraFast IGBT - TO-247AC
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHSInfineon SCT
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.85 V Current release time: 8 ns Power dissipation: 308 W
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:60A; Collector Emitter Voltage Vces:2.15V; Power Dissipation Pd:308W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Package / Case:TO-247AC; Power Dissipation Max:308W; Power Dissipation Pd:308W; Power Dissipation Pd:308W; Pulsed Current Icm:120A; Rise Time:6ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

Product Comparison

The three parts on the right have similar specifications to IRGP35B60PDPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Rise Time-Max

Power - Max

Fall Time-Max (tf)

Voltage - Collector Emitter Breakdown (Max)

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Current - Collector (Ic) (Max)

View Compare
IRGP35B60PDPBF

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Bulk

2000

Last Time Buy

1 (Unlimited)

3

Through Hole

EAR99

HIGH RELIABILITY, LOW CONDUCTION LOSS

Insulated Gate BIP Transistors

600V

308W

60A

1

Single

308W

COLLECTOR

Standard

26 ns

POWER CONTROL

6ns

N-CHANNEL

110 ns

2.55V

60A

42 ns

TO-247AC

600V

1.85V

34 ns

390V, 22A, 3.3 Ω, 15V

2.55V @ 15V, 35A

142 ns

NPT

160nC

120A

26ns/110ns

220μJ (on), 215μJ (off)

20V

5V

20.7mm

15.87mm

5.3086mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
IRGP4660DPBF

Infineon Technologies

26 Weeks

Through Hole

Through Hole

TO-247-3

3

-

-55°C~175°C TJ

Tube

2007

Active

1 (Unlimited)

-

-

EAR99

-

Insulated Gate BIP Transistors

-

330W

-

-

Single

134W

-

Standard

-

-

-

N-CHANNEL

-

1.9V

100A

115 ns

-

600V

1.6V

-

400V, 48A, 10 Ω, 15V

1.9V @ 15V, 48A

-

-

140nC

144A

60ns/145ns

625μJ (on), 1.28mJ (off)

20V

6.5V

20.7mm

15.87mm

5.31mm

No SVHC

No

ROHS3 Compliant

Lead Free

56ns

330W

46ns

-

-

-

-

IRGP35B60PDPBF vs IRGP4660DPBF
IRGP20B120UD-EP

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

SILICON

-55°C~150°C TJ

Bulk

1999

Obsolete

1 (Unlimited)

3

-

EAR99

-

Insulated Gate BIP Transistors

1.2kV

300W

40A

1

Single

300W

ISOLATED

Standard

50 ns

POWER CONTROL

20ns

N-CHANNEL

204 ns

4.85V

40A

300 ns

TO-247AD

1.2kV

3.05V

70 ns

600V, 20A, 5 Ω, 15V

4.85V @ 15V, 40A

228 ns

NPT

169nC

120A

-

850μJ (on), 425μJ (off)

20V

6V

-

-

-

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

1200V

-

-

-

IRGP35B60PDPBF vs IRGP20B120UD-EP
IRGP4630DPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-247-3

3

-

-40°C~175°C TJ

Tube

2012

Obsolete

1 (Unlimited)

-

-

EAR99

-

-

-

206W

-

-

Single

-

-

Standard

-

-

-

-

-

1.95V

30A

100 ns

-

600V

1.65V

-

400V, 18A, 22 Ω, 15V

1.95V @ 15V, 18A

-

-

35nC

54A

40ns/105ns

95μJ (on), 350μJ (off)

-

-

-

-

-

No SVHC

-

RoHS Compliant

-

-

-

-

-

NOT SPECIFIED

NOT SPECIFIED

47A

IRGP35B60PDPBF vs IRGP4630DPBF