Infineon Technologies IRGP20B120UD-EP
- Part Number:
- IRGP20B120UD-EP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854540-IRGP20B120UD-EP
- Description:
- IGBT 1200V 40A 300W TO247AD
- ECAD Model:
-
- Datasheet:
- IRGP20B120UD-EP
Infineon Technologies IRGP20B120UD-EP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP20B120UD-EP.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published1999
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC1.2kV
- Max Power Dissipation300W
- Current Rating40A
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation300W
- Case ConnectionISOLATED
- Input TypeStandard
- Turn On Delay Time50 ns
- Transistor ApplicationPOWER CONTROL
- Rise Time20ns
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time204 ns
- Collector Emitter Voltage (VCEO)4.85V
- Max Collector Current40A
- Reverse Recovery Time300 ns
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage3.05V
- Turn On Time70 ns
- Test Condition600V, 20A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic4.85V @ 15V, 40A
- Turn Off Time-Nom (toff)228 ns
- IGBT TypeNPT
- Gate Charge169nC
- Current - Collector Pulsed (Icm)120A
- Switching Energy850μJ (on), 425μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRGP20B120UD-EP Description
IRGP20B120UD-EP is a 1200v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP20B120UD-EP is optimized for Welding, UPS, and Induction Heating Applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP20B120UD-EP is in the TO-247AD package with 300W power dissipation.
IRGP20B120UD-EP Features
UltraFast Non-Punch Through (NPT) Technology Low Diode VF (1.67V Typical @ 20A & 25°C) 10 μs Short Circuit Capability Square RBSOA UltraSoft Diode Recovery Characteristics Positive VCE(on) Temperature Coefficient Extended Lead TO-247AD Package Lead-Free
IRGP20B120UD-EP Applications
Welding UPS Induction heating Automotive Infotainment & cluster Industrial Electronic point of sale (EPOS) Personal electronics Gaming
IRGP20B120UD-EP is a 1200v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP20B120UD-EP is optimized for Welding, UPS, and Induction Heating Applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP20B120UD-EP is in the TO-247AD package with 300W power dissipation.
IRGP20B120UD-EP Features
UltraFast Non-Punch Through (NPT) Technology Low Diode VF (1.67V Typical @ 20A & 25°C) 10 μs Short Circuit Capability Square RBSOA UltraSoft Diode Recovery Characteristics Positive VCE(on) Temperature Coefficient Extended Lead TO-247AD Package Lead-Free
IRGP20B120UD-EP Applications
Welding UPS Induction heating Automotive Infotainment & cluster Industrial Electronic point of sale (EPOS) Personal electronics Gaming
IRGP20B120UD-EP More Descriptions
IRGP20B120UD-EP Series 1200 V 20 A N-Channel UltraFast CoPack IGBT - TO-247AD
IGBT Module; Transistor Type:IGBT; Package/Case:TO-247AD; Current Rating:40A; Mounting Type:Through Hole; Voltage Rating:1200V ;RoHS Compliant: Yes
IGBT; Transistor Type:IGBT; DC Collector Current:40A; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:40A; Package / Case:TO-247AD; Power Dissipation Max:300W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
IGBT Module; Transistor Type:IGBT; Package/Case:TO-247AD; Current Rating:40A; Mounting Type:Through Hole; Voltage Rating:1200V ;RoHS Compliant: Yes
IGBT; Transistor Type:IGBT; DC Collector Current:40A; Power Dissipation Pd:300W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247AD; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:40A; Package / Case:TO-247AD; Power Dissipation Max:300W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
The three parts on the right have similar specifications to IRGP20B120UD-EP.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Switching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusRise Time-MaxPower - MaxTd (on/off) @ 25°CFall Time-Max (tf)Supplier Device PackageCurrent - Collector (Ic) (Max)HeightLengthWidthView Compare
-
IRGP20B120UD-EP14 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJBulk1999Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors1.2kV300W40A1Single300WISOLATEDStandard50 nsPOWER CONTROL20nsN-CHANNEL204 ns4.85V40A300 nsTO-247AD1.2kV1200V3.05V70 ns600V, 20A, 5 Ω, 15V4.85V @ 15V, 40A228 nsNPT169nC120A850μJ (on), 425μJ (off)20V6VNo SVHCNoRoHS CompliantLead Free------------- -
14 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTube2011Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors-268W-1Single-COLLECTORStandard-POWER CONTROL-N-CHANNEL-1.85V76A-TO-247AD600V-1.6V78 ns400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A188 nsTrench104nC105A390μJ (on), 632μJ (off)20V6.5VNo SVHC-RoHS Compliant-NOT SPECIFIEDNOT SPECIFIEDNot Qualified42ns268W46ns/105ns54ns-----
-
--Through HoleTO-247-3---40°C~175°C TJTube2016Obsolete1 (Unlimited)----------Standard-------170ns--650V--400V, 48A, 10Ohm, 15V2.1V @ 15V, 48A--145nC192A2.9mJ (on), 1.4mJ (off)----RoHS Compliant-----325W70ns/140ns-TO-24790A---
-
-Through HoleThrough HoleTO-247-33--55°C~175°C TJTube2007Obsolete1 (Unlimited)-EAR99--454W--Single--Standard-----2.1V140A155 ns-600V-1.7V-400V, 75A, 10 Ω, 15V2.1V @ 15V, 75A--150nC225A2.47mJ (on), 2.16mJ (off)--No SVHC-RoHS Compliant-NOT SPECIFIEDNOT SPECIFIED--454W50ns/200ns---20.7mm15.87mm5.31mm
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
24 January 2024
ULN2803A Darlington Transistor Specifications, Characteristics, Working Principle and More
Ⅰ. Overview of ULN2803AⅡ. Specifications of ULN2803AⅢ. Characteristics of ULN2803AⅣ. Schematic diagram of ULN2803AⅤ. How does ULN2803A work?Ⅵ. Where is ULN2803A used?Ⅶ. Application circuit of ULN2803AⅧ. How to... -
25 January 2024
XC6206P332MR Voltage Regulator Manufacturer, Working principle, Characteristics and More
Ⅰ. Description of XC6206P332MRⅡ. Manufacturer of XC6206P332MRⅢ. Technical parameters of XC6206P332MRⅣ. Working principle of XC6206P332MRⅤ. Block diagram of XC6206P332MRⅥ. Characteristics of XC6206P332MRⅦ. Precautions for using XC6206P332MRⅧ. How to... -
25 January 2024
IRS2092S Audio Amplifier Technical Parameters, Alternatives, Applications and Other Details
Ⅰ. Overview of IRS2092SⅡ. Manufacturer of IRS2092SⅢ. Technical parameters of IRS2092SⅣ. How does IRS2092S work?Ⅴ. Circuit diagram of IRS2092SⅥ. Where is IRS2092S used?Ⅶ. What should we pay attention... -
26 January 2024
In-depth Understanding of 2SA1943 PNP Power Transistor
Ⅰ. 2SA1943 overviewⅡ. 2SA1943 symbol, footprint and pin configurationⅢ. Applications of 2SA1943Ⅳ. Absolute maximum ratings of 2SA1943Ⅴ. How does 2SA1943 transistor realize high collector current?Ⅵ. How to use...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.