Infineon Technologies IRGP4063PBF

Name: IRGP4063PBF
Brand: Infineon Technologies
SKU: 2854703-IRGP4063PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRGP4063PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854703-IRGP4063PBF

Description:: IGBT 600V 96A 330W TO247AC

ECAD Model:

Datasheet:: IRGP4063PBF

Specifications

Infineon Technologies IRGP4063PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4063PBF.

Factory Lead Time
26 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
38.000013g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2009
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
330W
Number of Elements
1
Rise Time-Max
56ns
Element Configuration
Single
Power Dissipation
330W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
55 ns
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
165 ns
Collector Emitter Voltage (VCEO)
2.14V
Max Collector Current
96A
JEDEC-95 Code
TO-247AC
Collector Emitter Breakdown Voltage
600V
Gate to Source Voltage (Vgs)
30V
Collector Emitter Saturation Voltage
1.65V
Turn On Time
100 ns
Test Condition
400V, 48A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.14V @ 15V, 48A
Turn Off Time-Nom (toff)
210 ns
IGBT Type
Trench
Gate Charge
95nC
Current - Collector Pulsed (Icm)
144A
Td (on/off) @ 25°C
60ns/145ns
Switching Energy
625μJ (on), 1.28mJ (off)
Gate-Emitter Thr Voltage-Max
6.5V
Fall Time-Max (tf)
46ns
Height
20.7mm
Length
15.87mm
Width
5.3086mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRGP4063PBF Description IRGP4063PBF is a 600 V, 48 A IGBT avalaible in TO-247 package. IRGP4063PBF IGBTs are designed for medium-frequency applications with fast response times and deliver the best efficiency possible to the user. FRED diodes, which have been optimized for use with IGBTs, are used.
IRGP4063PBF Features Low VCE (ON) Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Tight parameter distribution
Lead-Free Package
Square RBSOA
100% of the parts tested for ILM
Positive VCE (ON) Temperature co-efficient
IRGP4063PBF Applications Refrigerators
Switch-mode and resonant-mode power supplies
Motor controls
DC choppers
Uninterruptible Power Supplies (UPS)

IRGP4063PBF More Descriptions

Trans IGBT Chip N-CH 600V 96A 3-Pin(3 Tab) TO-247AC Tube
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AC
600V UltraFast Trench IGBT in a TO-247 package
TUBE / 600V 96.000A TO-247; TUBE / 600V 96.000A TO-247
French Electronic Distributor since 1988
IGBT,N CH,600V,96A,TO-247AC; Transistor Type:IGBT; DC Collector Current:96A; Collector Emitter Voltage Vces:1.65V; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:330W

Product Comparison

The three parts on the right have similar specifications to IRGP4063PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Number of Elements

Rise Time-Max

Element Configuration

Power Dissipation

Case Connection

Input Type

Turn On Delay Time

Transistor Application

Polarity/Channel Type

Turn-Off Delay Time

Collector Emitter Voltage (VCEO)

Max Collector Current

JEDEC-95 Code

Collector Emitter Breakdown Voltage

Gate to Source Voltage (Vgs)

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Voltage - Rated DC

Current Rating

Rise Time

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Gate-Emitter Voltage-Max

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Power - Max

View Compare
IRGP4063PBF

Infineon Technologies

26 Weeks

Through Hole

Through Hole

TO-247-3

3

38.000013g

SILICON

-55°C~175°C TJ

Tube

2009

Active

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

330W

1

56ns

Single

330W

COLLECTOR

Standard

55 ns

POWER CONTROL

N-CHANNEL

165 ns

2.14V

96A

TO-247AC

600V

30V

1.65V

100 ns

400V, 48A, 10 Ω, 15V

2.14V @ 15V, 48A

210 ns

Trench

95nC

144A

60ns/145ns

625μJ (on), 1.28mJ (off)

6.5V

46ns

20.7mm

15.87mm

5.3086mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
IRGP20B120UD-EP

Infineon Technologies

14 Weeks

Through Hole

Through Hole

TO-247-3

3

-

SILICON

-55°C~150°C TJ

Bulk

1999

Obsolete

1 (Unlimited)

3

EAR99

Insulated Gate BIP Transistors

300W

1

-

Single

300W

ISOLATED

Standard

50 ns

POWER CONTROL

N-CHANNEL

204 ns

4.85V

40A

TO-247AD

1.2kV

-

3.05V

70 ns

600V, 20A, 5 Ω, 15V

4.85V @ 15V, 40A

228 ns

NPT

169nC

120A

-

850μJ (on), 425μJ (off)

6V

-

-

-

-

No SVHC

No

RoHS Compliant

1.2kV

40A

20ns

300 ns

1200V

20V

Lead Free

-

-

-

-

IRGP4063PBF vs IRGP20B120UD-EP
IRGP4640-EPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-247-3

3

-

-

-40°C~175°C TJ

Tube

2013

Obsolete

1 (Unlimited)

-

EAR99

Insulated Gate BIP Transistors

250W

-

-

Single

-

-

Standard

-

-

N-CHANNEL

-

1.9V

65A

-

600V

-

1.6V

-

400V, 24A, 10 Ω, 15V

1.9V @ 15V, 24A

-

-

75nC

72A

40ns/105ns

100μJ (on), 600μJ (off)

6.5V

40ns

-

-

-

No SVHC

-

RoHS Compliant

-

-

-

-

-

20V

-

NOT SPECIFIED

NOT SPECIFIED

IRGP4640

250W

IRGP4063PBF vs IRGP4640-EPBF
IRGP4690DPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-247-3

3

-

-

-55°C~175°C TJ

Tube

2007

Obsolete

1 (Unlimited)

-

EAR99

-

454W

-

-

Single

-

-

Standard

-

-

-

-

2.1V

140A

-

600V

-

1.7V

-

400V, 75A, 10 Ω, 15V

2.1V @ 15V, 75A

-

-

150nC

225A

50ns/200ns

2.47mJ (on), 2.16mJ (off)

-

-

20.7mm

15.87mm

5.31mm

No SVHC

-

RoHS Compliant

-

-

-

155 ns

-

-

-

NOT SPECIFIED

NOT SPECIFIED

-

454W

IRGP4063PBF vs IRGP4690DPBF