Infineon Technologies IRGP4262D-EPBF
- Part Number:
- IRGP4262D-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497313-IRGP4262D-EPBF
- Description:
- IGBT 650V 60A 250W TO247AC
- Datasheet:
- IRGP4262D(-E)PBF
Infineon Technologies IRGP4262D-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4262D-EPBF.
- Factory Lead Time15 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Rise Time-Max45ns
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max250W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current60A
- Reverse Recovery Time170 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.7V
- Test Condition400V, 24A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 24A
- Gate Charge70nC
- Current - Collector Pulsed (Icm)96A
- Td (on/off) @ 25°C24ns/73ns
- Switching Energy520μJ (on), 240μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max7.7V
- Fall Time-Max (tf)40ns
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRGP4262D-EPBF Applications
Industrial Motor Drive
UPS
IRGP4262D-EPBF More Descriptions
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247AD Tube
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AD
Target Applications: Pump; Solar; UPS; Welding
IGBT W/ULTRAFAST SOFT RECOVERY D
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
TRANSISTOR, BIPOLAR, N CHANNEL, 650V, TO-247AD
Target Applications: Pump; Solar; UPS; Welding
IGBT W/ULTRAFAST SOFT RECOVERY D
The three parts on the right have similar specifications to IRGP4262D-EPBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationRise Time-MaxElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)REACH SVHCRadiation HardeningRoHS StatusLead FreePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Current - Collector (Ic) (Max)Transistor Element MaterialNumber of TerminationsQualification StatusNumber of ElementsCase ConnectionTransistor ApplicationJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)IGBT TypeView Compare
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IRGP4262D-EPBF15 WeeksThrough HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250W45nsSingleStandard250WN-CHANNEL2.1V60A170 ns650V1.7V400V, 24A, 10 Ω, 15V2.1V @ 15V, 24A70nC96A24ns/73ns520μJ (on), 240μJ (off)20V7.7V40nsNo SVHCNoRoHS CompliantLead Free--------------
-
-------2016Obsolete1 (Unlimited)------------------------RoHS Compliant--------------
-
-Through HoleThrough HoleTO-247-33-40°C~175°C TJTube2012Obsolete1 (Unlimited)EAR99-206W-SingleStandard--1.95V30A100 ns600V1.65V400V, 18A, 22 Ω, 15V1.95V @ 15V, 18A35nC54A40ns/105ns95μJ (on), 350μJ (off)---No SVHC-RoHS Compliant-NOT SPECIFIEDNOT SPECIFIED47A----------
-
14 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTube2011Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors268W42nsSingleStandard268WN-CHANNEL1.85V76A-600V1.6V400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5V54nsNo SVHC-RoHS Compliant-NOT SPECIFIEDNOT SPECIFIED-SILICON3Not Qualified1COLLECTORPOWER CONTROLTO-247AD78 ns188 nsTrench
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