Infineon Technologies IRGP4640-EPBF
- Part Number:
- IRGP4640-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2498114-IRGP4640-EPBF
- Description:
- IGBT 600V 65A 250W TO247AD
- ECAD Model:
-
- Datasheet:
- IRGP4640(-E)PBF
Infineon Technologies IRGP4640-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4640-EPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2013
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation250W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberIRGP4640
- Element ConfigurationSingle
- Input TypeStandard
- Power - Max250W
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.9V
- Max Collector Current65A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Test Condition400V, 24A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.9V @ 15V, 24A
- Gate Charge75nC
- Current - Collector Pulsed (Icm)72A
- Td (on/off) @ 25°C40ns/105ns
- Switching Energy100μJ (on), 600μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)40ns
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
IRGP4640-EPBF Description
The IRGP4640-EPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRGP4640-EPBF Features
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 24A
VCES = 600V
IC = 40A, TC = 100°C
Low VCE(ON) and switching losses
Lead-Free, RoHS Compliant
IRGP4640-EPBF Applications
Inverters
UPS
Welding
Industrial Motor Drive
The IRGP4640-EPBF is an Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The Insulated Gate Bipolar Transistor, or IGBT, is a BJT and MOSFET hybrid. The name also implies the union between them. The input portion of a MOSFET with an extremely high input impedance is referred to as an "insulated gate." Instead of drawing input current, it relies on the voltage at its gate terminal to function. Bipolar refers to the output region of a BJT, where both classes of charge carriers are responsible for the current flow. Using low voltage signals, it is able to manage very high currents and voltages. IGBTs are voltage-controlled devices thanks to this hybrid configuration.
IRGP4640-EPBF Features
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 24A
VCES = 600V
IC = 40A, TC = 100°C
Low VCE(ON) and switching losses
Lead-Free, RoHS Compliant
IRGP4640-EPBF Applications
Inverters
UPS
Welding
Industrial Motor Drive
IRGP4640-EPBF More Descriptions
Trans IGBT Chip N-CH 600V 65A 250000mW 3-Pin(3 Tab) TO-247AD Tube
IGBT, SINGLE, 600V, 65A, TO-247AD-3; DC Collector Current: 65A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
Igbt, 600V, 65A, 250W, To-247Ad; Continuous Collector Current:65A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4640-EPBF..
IGBT, SINGLE, 600V, 65A, TO-247AD-3; DC Collector Current: 65A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
Igbt, 600V, 65A, 250W, To-247Ad; Continuous Collector Current:65A; Collector Emitter Saturation Voltage:1.9V; Power Dissipation:250W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4640-EPBF..
The three parts on the right have similar specifications to IRGP4640-EPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberElement ConfigurationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)REACH SVHCRoHS StatusFactory Lead TimeTransistor Element MaterialNumber of TerminationsQualification StatusNumber of ElementsRise Time-MaxCase ConnectionTransistor ApplicationJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)IGBT TypeReverse Recovery TimeRadiation HardeningLead FreeHeightLengthWidthView Compare
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IRGP4640-EPBFThrough HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250WNOT SPECIFIEDNOT SPECIFIEDIRGP4640SingleStandard250WN-CHANNEL1.9V65A600V1.6V400V, 24A, 10 Ω, 15V1.9V @ 15V, 24A75nC72A40ns/105ns100μJ (on), 600μJ (off)20V6.5V40nsNo SVHCRoHS Compliant------------------- -
Through HoleThrough HoleTO-247-33-55°C~175°C TJTube2011Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors268WNOT SPECIFIEDNOT SPECIFIED-SingleStandard268WN-CHANNEL1.85V76A600V1.6V400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5V54nsNo SVHCRoHS Compliant14 WeeksSILICON3Not Qualified142nsCOLLECTORPOWER CONTROLTO-247AD78 ns188 nsTrench------
-
Through HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99Insulated Gate BIP Transistors250W---SingleStandard250WN-CHANNEL2.1V60A650V1.7V400V, 24A, 10 Ω, 15V2.1V @ 15V, 24A70nC96A24ns/73ns520μJ (on), 240μJ (off)20V7.7V40nsNo SVHCRoHS Compliant15 Weeks----45ns------170 nsNoLead Free---
-
Through HoleThrough HoleTO-247-33-55°C~175°C TJTube2007Obsolete1 (Unlimited)EAR99-454WNOT SPECIFIEDNOT SPECIFIED-SingleStandard454W-2.1V140A600V1.7V400V, 75A, 10 Ω, 15V2.1V @ 15V, 75A150nC225A50ns/200ns2.47mJ (on), 2.16mJ (off)---No SVHCRoHS Compliant------------155 ns--20.7mm15.87mm5.31mm
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