Infineon Technologies IRGP4069-EPBF
- Part Number:
- IRGP4069-EPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497321-IRGP4069-EPBF
- Description:
- IGBT 600V 76A 268W TO247
- ECAD Model:
-
- Datasheet:
- IRGP4069PbF/-EPbF
Infineon Technologies IRGP4069-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4069-EPBF.
- Factory Lead Time14 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation268W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Qualification StatusNot Qualified
- Number of Elements1
- Rise Time-Max42ns
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max268W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)1.85V
- Max Collector Current76A
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.6V
- Turn On Time78 ns
- Test Condition400V, 35A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.85V @ 15V, 35A
- Turn Off Time-Nom (toff)188 ns
- IGBT TypeTrench
- Gate Charge104nC
- Current - Collector Pulsed (Icm)105A
- Td (on/off) @ 25°C46ns/105ns
- Switching Energy390μJ (on), 632μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max6.5V
- Fall Time-Max (tf)54ns
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
IRGP4069-EPBF Description
An INSULATED GATE BIPOLAR TRANSISTOR is the IRGP4069-EPBF.
IRGP4069-EPBF Features
? High Performance across a Variety of Applications
? Because of its low VCE (ON) and low switching losses, it is suitable for a wide range of switching frequencies.
? Tough Transient Operation for Enhanced Reliability
? Excellent Parallel Operation with Current Sharing
IRGP4069-EPBF Applications
Switching applications
An INSULATED GATE BIPOLAR TRANSISTOR is the IRGP4069-EPBF.
IRGP4069-EPBF Features
? High Performance across a Variety of Applications
? Because of its low VCE (ON) and low switching losses, it is suitable for a wide range of switching frequencies.
? Tough Transient Operation for Enhanced Reliability
? Excellent Parallel Operation with Current Sharing
IRGP4069-EPBF Applications
Switching applications
IRGP4069-EPBF More Descriptions
Trans IGBT Chip N-CH 600V 76A 268000mW 3-Pin(3 Tab) TO-247AD Tube
IGBT, SINGLE, 600V, 76A, TO-247AD-3; DC Collector Current: 76A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 268W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
Igbt, 600V, 76A, 268W, To-247Ad; Continuous Collector Current:76A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:268W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4069-EPBF..
IGBT, SINGLE, 600V, 76A, TO-247AD-3; DC Collector Current: 76A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 268W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. of
Igbt, 600V, 76A, 268W, To-247Ad; Continuous Collector Current:76A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:268W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Infineon IRGP4069-EPBF..
The three parts on the right have similar specifications to IRGP4069-EPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsRise Time-MaxElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentJEDEC-95 CodeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)REACH SVHCRoHS StatusVoltage - Rated DCCurrent RatingPower DissipationTurn On Delay TimeRise TimeTurn-Off Delay TimeReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Radiation HardeningLead FreeBase Part NumberView Compare
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IRGP4069-EPBF14 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTube2011Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors268WNOT SPECIFIEDNOT SPECIFIEDNot Qualified142nsSingleCOLLECTORStandard268WPOWER CONTROLN-CHANNEL1.85V76ATO-247AD600V1.6V78 ns400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A188 nsTrench104nC105A46ns/105ns390μJ (on), 632μJ (off)20V6.5V54nsNo SVHCRoHS Compliant------------ -
14 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJBulk1999Obsolete1 (Unlimited)3EAR99Insulated Gate BIP Transistors300W---1-SingleISOLATEDStandard-POWER CONTROLN-CHANNEL4.85V40ATO-247AD1.2kV3.05V70 ns600V, 20A, 5 Ω, 15V4.85V @ 15V, 40A228 nsNPT169nC120A-850μJ (on), 425μJ (off)20V6V-No SVHCRoHS Compliant1.2kV40A300W50 ns20ns204 ns300 ns1200VNoLead Free-
-
-Through HoleThrough HoleTO-247-33--40°C~175°C TJTube2013Obsolete1 (Unlimited)-EAR99Insulated Gate BIP Transistors250WNOT SPECIFIEDNOT SPECIFIED---Single-Standard250W-N-CHANNEL1.9V65A-600V1.6V-400V, 24A, 10 Ω, 15V1.9V @ 15V, 24A--75nC72A40ns/105ns100μJ (on), 600μJ (off)20V6.5V40nsNo SVHCRoHS Compliant----------IRGP4640
-
15 WeeksThrough HoleThrough HoleTO-247-33--40°C~175°C TJTube2013Obsolete1 (Unlimited)-EAR99Insulated Gate BIP Transistors250W----45nsSingle-Standard250W-N-CHANNEL2.1V60A-650V1.7V-400V, 24A, 10 Ω, 15V2.1V @ 15V, 24A--70nC96A24ns/73ns520μJ (on), 240μJ (off)20V7.7V40nsNo SVHCRoHS Compliant------170 ns-NoLead Free-
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