Infineon Technologies IRGP4630DPBF
- Part Number:
- IRGP4630DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497339-IRGP4630DPBF
- Description:
- IGBT 600V 47A 206W TO247AC
- Datasheet:
- IRGx4630D(-E)PbF
Infineon Technologies IRGP4630DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4630DPBF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation206W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Element ConfigurationSingle
- Input TypeStandard
- Collector Emitter Voltage (VCEO)1.95V
- Max Collector Current30A
- Reverse Recovery Time100 ns
- Collector Emitter Breakdown Voltage600V
- Current - Collector (Ic) (Max)47A
- Collector Emitter Saturation Voltage1.65V
- Test Condition400V, 18A, 22 Ω, 15V
- Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 18A
- Gate Charge35nC
- Current - Collector Pulsed (Icm)54A
- Td (on/off) @ 25°C40ns/105ns
- Switching Energy95μJ (on), 350μJ (off)
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
IRGP4630DPBF Description
Bipolar Transistor with Insulated Gate and Ultrafast Soft Recovery Diode
IRGP4630DPBF Features
Low switching and VCE(ON) losses high switching frequencies and efficiency across a wide range of applications
175 °C maximum connection temperature and square RBSOA enhanced reliability due to high power capability and robust hard switching performance
Positive VCE (ON) temperature coefficient and closely spaced parameter distribution excellent parallel operation with current sharing
Short circuit protection is made possible with a 5 s SOA.
Lead-free; complies with RoHS
IRGP4630DPBF Applications
Drive for industrial motors
Converters
UPS
Welder
Bipolar Transistor with Insulated Gate and Ultrafast Soft Recovery Diode
IRGP4630DPBF Features
Low switching and VCE(ON) losses high switching frequencies and efficiency across a wide range of applications
175 °C maximum connection temperature and square RBSOA enhanced reliability due to high power capability and robust hard switching performance
Positive VCE (ON) temperature coefficient and closely spaced parameter distribution excellent parallel operation with current sharing
Short circuit protection is made possible with a 5 s SOA.
Lead-free; complies with RoHS
IRGP4630DPBF Applications
Drive for industrial motors
Converters
UPS
Welder
IRGP4630DPBF More Descriptions
Trans IGBT Chip N-CH 600V 47A 206000mW 3-Pin(3 Tab) TO-247AC Tube
Insulated Gate Bipolar Transistor, 47A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBT, SINGLE, 1.65V, 47A, TO-247AC
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
TUBE / G6, 600V, 30A, COPAK-247AC
Insulated Gate Bipolar Transistor, 47A I(C), 600V V(BR)CES, N-Channel, TO-247AC
IGBT, SINGLE, 1.65V, 47A, TO-247AC
IGBT Transistors 600V TRENCH IGBT ULTRAFAST
TUBE / G6, 600V, 30A, COPAK-247AC
The three parts on the right have similar specifications to IRGP4630DPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Element ConfigurationInput TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCurrent - Collector (Ic) (Max)Collector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyREACH SVHCRoHS StatusFactory Lead TimeTransistor Element MaterialNumber of TerminationsSubcategoryQualification StatusNumber of ElementsRise Time-MaxCase ConnectionPower - MaxTransistor ApplicationPolarity/Channel TypeJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)IGBT TypeGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)Radiation HardeningLead FreeSupplier Device PackageVoltage - Collector Emitter Breakdown (Max)View Compare
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IRGP4630DPBFThrough HoleThrough HoleTO-247-33-40°C~175°C TJTube2012Obsolete1 (Unlimited)EAR99206WNOT SPECIFIEDNOT SPECIFIEDSingleStandard1.95V30A100 ns600V47A1.65V400V, 18A, 22 Ω, 15V1.95V @ 15V, 18A35nC54A40ns/105ns95μJ (on), 350μJ (off)No SVHCRoHS Compliant-----------------------
-
Through HoleThrough HoleTO-247-33-55°C~175°C TJTube2011Obsolete1 (Unlimited)EAR99268WNOT SPECIFIEDNOT SPECIFIEDSingleStandard1.85V76A-600V-1.6V400V, 35A, 10 Ω, 15V1.85V @ 15V, 35A104nC105A46ns/105ns390μJ (on), 632μJ (off)No SVHCRoHS Compliant14 WeeksSILICON3Insulated Gate BIP TransistorsNot Qualified142nsCOLLECTOR268WPOWER CONTROLN-CHANNELTO-247AD78 ns188 nsTrench20V6.5V54ns----
-
Through HoleThrough HoleTO-247-33-40°C~175°C TJTube2013Obsolete1 (Unlimited)EAR99250W--SingleStandard2.1V60A170 ns650V-1.7V400V, 24A, 10 Ω, 15V2.1V @ 15V, 24A70nC96A24ns/73ns520μJ (on), 240μJ (off)No SVHCRoHS Compliant15 Weeks--Insulated Gate BIP Transistors--45ns-250W-N-CHANNEL----20V7.7V40nsNoLead Free--
-
-Through HoleTO-247-3--40°C~175°C TJTube2016Obsolete1 (Unlimited)-----Standard--170ns-90A-400V, 48A, 10Ohm, 15V2.1V @ 15V, 48A145nC192A70ns/140ns2.9mJ (on), 1.4mJ (off)-RoHS Compliant--------325W-----------TO-247650V
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