Infineon Technologies IRGP4263D1-EPBF

Name: IRGP4263D1-EPBF
Brand: Infineon Technologies
SKU: 2497241-IRGP4263D1-EPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRGP4263D1-EPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2497241-IRGP4263D1-EPBF

Description:: IGBT 600V TO247 COPAK

ECAD Model:

Datasheet:: IRGP4263D1-EPBF

Specifications

Infineon Technologies IRGP4263D1-EPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4263D1-EPBF.

Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2016
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Input Type
Standard
Power - Max
325W
Reverse Recovery Time
170ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
90A
Test Condition
400V, 48A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 48A
Gate Charge
145nC
Current - Collector Pulsed (Icm)
192A
Td (on/off) @ 25°C
70ns/140ns
Switching Energy
2.9mJ (on), 1.4mJ (off)
RoHS Status
RoHS Compliant

Description

IRGP4263D1-EPBF Description
IRGP4263D1-EPBF is a 650v insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGP4263D1-EPBF provides high efficiency in a wide range of applications and switching frequencies and improved reliability due to rugged hard switching performance and higher power capability. The Operating and Storage Temperature Range is between -40 and 175℃. And the transistor IRGP4263D1-EPBF is in the TO-247AD package with 325W power dissipation.

IRGP4263D1-EPBF Features
Low V CE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5μs short circuit SOA Lead-free, RoHS compliant

IRGP4263D1-EPBF Applications
Industrial motor drive UPS Solar Inverters Welding

IRGP4263D1-EPBF More Descriptions

Multilayer Ceramic Capacitors MLCC - Leaded 470pF 50volts X7R LS=5mm /-10%
IGBT 600V TO247 COPAK

Product Comparison

The three parts on the right have similar specifications to IRGP4263D1-EPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Input Type

Power - Max

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Factory Lead Time

Mount

Number of Pins

ECCN Code

Subcategory

Max Power Dissipation

Rise Time-Max

Element Configuration

Power Dissipation

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Fall Time-Max (tf)

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

View Compare
IRGP4263D1-EPBF

Infineon Technologies

Through Hole

TO-247-3

TO-247

-40°C~175°C TJ

Tube

2016

Obsolete

1 (Unlimited)

Standard

325W

170ns

650V

90A

400V, 48A, 10Ohm, 15V

2.1V @ 15V, 48A

145nC

192A

70ns/140ns

2.9mJ (on), 1.4mJ (off)

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRGP4660DPBF

Infineon Technologies

Through Hole

TO-247-3

-

-55°C~175°C TJ

Tube

2007

Active

1 (Unlimited)

Standard

330W

115 ns

-

-

400V, 48A, 10 Ω, 15V

1.9V @ 15V, 48A

140nC

144A

60ns/145ns

625μJ (on), 1.28mJ (off)

ROHS3 Compliant

26 Weeks

Through Hole

3

EAR99

Insulated Gate BIP Transistors

330W

56ns

Single

134W

N-CHANNEL

1.9V

100A

600V

1.6V

20V

6.5V

46ns

20.7mm

15.87mm

5.31mm

No SVHC

No

Lead Free

-

-

-

IRGP4263D1-EPBF vs IRGP4660DPBF
IRGP4640-EPBF

Infineon Technologies

Through Hole

TO-247-3

-

-40°C~175°C TJ

Tube

2013

Obsolete

1 (Unlimited)

Standard

250W

-

-

-

400V, 24A, 10 Ω, 15V

1.9V @ 15V, 24A

75nC

72A

40ns/105ns

100μJ (on), 600μJ (off)

RoHS Compliant

-

Through Hole

3

EAR99

Insulated Gate BIP Transistors

250W

-

Single

-

N-CHANNEL

1.9V

65A

600V

1.6V

20V

6.5V

40ns

-

-

-

No SVHC

-

-

NOT SPECIFIED

NOT SPECIFIED

IRGP4640

IRGP4263D1-EPBF vs IRGP4640-EPBF
IRGP4269DPBF

Infineon Technologies

-

-

-

-

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRGP4263D1-EPBF vs IRGP4269DPBF