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IRGP4660DPBF

Infineon Technologies IRGP4660DPBF

Part Number:
IRGP4660DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2854663-IRGP4660DPBF
Description:
IGBT 600V 100A 330W TO247AC
ECAD Model:
Datasheet:
IRGP4660DPBF

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Specifications
Infineon Technologies IRGP4660DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4660DPBF.
  • Factory Lead Time
    26 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2007
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    330W
  • Rise Time-Max
    56ns
  • Element Configuration
    Single
  • Power Dissipation
    134W
  • Input Type
    Standard
  • Power - Max
    330W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.9V
  • Max Collector Current
    100A
  • Reverse Recovery Time
    115 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.6V
  • Test Condition
    400V, 48A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.9V @ 15V, 48A
  • Gate Charge
    140nC
  • Current - Collector Pulsed (Icm)
    144A
  • Td (on/off) @ 25°C
    60ns/145ns
  • Switching Energy
    625μJ (on), 1.28mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6.5V
  • Fall Time-Max (tf)
    46ns
  • Height
    20.7mm
  • Length
    15.87mm
  • Width
    5.31mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRGP4660DPBF Description IRGP4660DPBF is a 600 V, 60 A IGBT with an anti-parallel diode in the TO-247 package. The bipolar transistor IRGP4660DPBF has an insulated gate terminal. The IRGP4660DPBF IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch into a single device. IGBTs are ideal for applications requiring high voltage and current. IGBTs like the IRGP4660DPBF are made to drive high-power applications with a low-power input.
IRGP4660DPBF Features Low VCE(ON) and switching losses
5μs short circuit SOA
Lead-free, RoHS compliant
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
IRGP4660DPBF Applications Industrial Motor Drive
Inverters
UPS
Solutions for solar energy systems
Industrial heating and welding
IRGP4660DPBF More Descriptions
Trans IGBT Chip N-CH 600V 100A 330000mW 3-Pin(3 Tab) TO-247AC Tube
600 V, 60 A IGBT in TO-247 package, TO247COPAK-3, RoHSInfineon SCT
IGBT N-Ch 600V 100A Ultrafast TO247AC
IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
Target Applications: AC-DC; Pump; Solar; UPS; Welding
IGBT, MODULE, 600V, 100A, TO-247AC-3
IRGP4660 - DISCRETE IGBT WITH AN
IGBT, SINGLE, 600V, 100A, TO-247AC; DC Collector Current: 100A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 330W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of
Product Comparison
The three parts on the right have similar specifications to IRGP4660DPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Rise Time-Max
    Element Configuration
    Power Dissipation
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Number of Elements
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    IGBT Type
    Supplier Device Package
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    View Compare
  • IRGP4660DPBF
    IRGP4660DPBF
    Infineon Technologies
    26 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    2007
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    330W
    56ns
    Single
    134W
    Standard
    330W
    N-CHANNEL
    1.9V
    100A
    115 ns
    600V
    1.6V
    400V, 48A, 10 Ω, 15V
    1.9V @ 15V, 48A
    140nC
    144A
    60ns/145ns
    625μJ (on), 1.28mJ (off)
    20V
    6.5V
    46ns
    20.7mm
    15.87mm
    5.31mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4069-EPBF
    IRGP4069-EPBF
    Infineon Technologies
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    268W
    42ns
    Single
    -
    Standard
    268W
    N-CHANNEL
    1.85V
    76A
    -
    600V
    1.6V
    400V, 35A, 10 Ω, 15V
    1.85V @ 15V, 35A
    104nC
    105A
    46ns/105ns
    390μJ (on), 632μJ (off)
    20V
    6.5V
    54ns
    -
    -
    -
    No SVHC
    -
    RoHS Compliant
    -
    SILICON
    3
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    1
    COLLECTOR
    POWER CONTROL
    TO-247AD
    78 ns
    188 ns
    Trench
    -
    -
    -
    IRGP4660DPBF vs IRGP4069-EPBF
  • IRGP4263D1-EPBF
    IRGP4263D1-EPBF
    Infineon Technologies
    -
    -
    Through Hole
    TO-247-3
    -
    -40°C~175°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    Standard
    325W
    -
    -
    -
    170ns
    -
    -
    400V, 48A, 10Ohm, 15V
    2.1V @ 15V, 48A
    145nC
    192A
    70ns/140ns
    2.9mJ (on), 1.4mJ (off)
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247
    650V
    90A
    IRGP4660DPBF vs IRGP4263D1-EPBF
  • IRGP4690DPBF
    IRGP4690DPBF
    Infineon Technologies
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    2007
    Obsolete
    1 (Unlimited)
    EAR99
    -
    454W
    -
    Single
    -
    Standard
    454W
    -
    2.1V
    140A
    155 ns
    600V
    1.7V
    400V, 75A, 10 Ω, 15V
    2.1V @ 15V, 75A
    150nC
    225A
    50ns/200ns
    2.47mJ (on), 2.16mJ (off)
    -
    -
    -
    20.7mm
    15.87mm
    5.31mm
    No SVHC
    -
    RoHS Compliant
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRGP4660DPBF vs IRGP4690DPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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