Infineon Technologies IRGP4269DPBF
- Part Number:
- IRGP4269DPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2497436-IRGP4269DPBF
- Description:
- IGBT 600V TO247 COPAK
- Datasheet:
- IRGP4269DPBF
Infineon Technologies IRGP4269DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4269DPBF.
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- RoHS StatusRoHS Compliant
IRGP4269DPBF Description
IRGP4269DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP4269DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP4269DPBF has the common source configuration.
IRGP4269DPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGP4269DPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
IRGP4269DPBF More Descriptions
Multilayer Ceramic Capacitors MLCC - Leaded 0.047uF 50volts X7R LS=5mm /-10%
OEMs, CMs ONLY (NO BROKERS)
IGBT 600V TO247 COPAK
OEMs, CMs ONLY (NO BROKERS)
IGBT 600V TO247 COPAK
The three parts on the right have similar specifications to IRGP4269DPBF.
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ImagePart NumberManufacturerPublishedPart StatusMoisture Sensitivity Level (MSL)RoHS StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingECCN CodeSubcategoryMax Power DissipationRise Time-MaxElement ConfigurationPower DissipationInput TypePower - MaxPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxFall Time-Max (tf)HeightLengthWidthREACH SVHCRadiation HardeningLead FreeTransistor Element MaterialNumber of TerminationsVoltage - Rated DCCurrent RatingNumber of ElementsCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeTurn-Off Delay TimeJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Turn On TimeTurn Off Time-Nom (toff)IGBT TypePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Current - Collector (Ic) (Max)View Compare
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IRGP4269DPBF2016Obsolete1 (Unlimited)RoHS Compliant-------------------------------------------------------
-
2007Active1 (Unlimited)ROHS3 Compliant26 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTubeEAR99Insulated Gate BIP Transistors330W56nsSingle134WStandard330WN-CHANNEL1.9V100A115 ns600V1.6V400V, 48A, 10 Ω, 15V1.9V @ 15V, 48A140nC144A60ns/145ns625μJ (on), 1.28mJ (off)20V6.5V46ns20.7mm15.87mm5.31mmNo SVHCNoLead Free------------------
-
1999Obsolete1 (Unlimited)RoHS Compliant14 WeeksThrough HoleThrough HoleTO-247-33-55°C~150°C TJBulkEAR99Insulated Gate BIP Transistors300W-Single300WStandard-N-CHANNEL4.85V40A300 ns1.2kV3.05V600V, 20A, 5 Ω, 15V4.85V @ 15V, 40A169nC120A-850μJ (on), 425μJ (off)20V6V----No SVHCNoLead FreeSILICON31.2kV40A1ISOLATED50 nsPOWER CONTROL20ns204 nsTO-247AD1200V70 ns228 nsNPT---
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2012Obsolete1 (Unlimited)RoHS Compliant-Through HoleThrough HoleTO-247-33-40°C~175°C TJTubeEAR99-206W-Single-Standard--1.95V30A100 ns600V1.65V400V, 18A, 22 Ω, 15V1.95V @ 15V, 18A35nC54A40ns/105ns95μJ (on), 350μJ (off)------No SVHC-----------------NOT SPECIFIEDNOT SPECIFIED47A
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