IRGP4269DPBF

Infineon Technologies IRGP4269DPBF

Part Number:
IRGP4269DPBF
Manufacturer:
Infineon Technologies
Ventron No:
2497436-IRGP4269DPBF
Description:
IGBT 600V TO247 COPAK
ECAD Model:
Datasheet:
IRGP4269DPBF

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Specifications
Infineon Technologies IRGP4269DPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRGP4269DPBF.
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    RoHS Compliant
Description
IRGP4269DPBF Description   IRGP4269DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGP4269DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IRGP4269DPBF has the common source configuration.     IRGP4269DPBF Features   Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging     IRGP4269DPBF Applications   ISM applications DC large signal applications Power factor correction Electronic lamp ballasts Flat panel display  
IRGP4269DPBF More Descriptions
Multilayer Ceramic Capacitors MLCC - Leaded 0.047uF 50volts X7R LS=5mm /-10%
OEMs, CMs ONLY (NO BROKERS)
IGBT 600V TO247 COPAK
Product Comparison
The three parts on the right have similar specifications to IRGP4269DPBF.
  • Image
    Part Number
    Manufacturer
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    RoHS Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    ECCN Code
    Subcategory
    Max Power Dissipation
    Rise Time-Max
    Element Configuration
    Power Dissipation
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Transistor Element Material
    Number of Terminations
    Voltage - Rated DC
    Current Rating
    Number of Elements
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Turn-Off Delay Time
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Turn On Time
    Turn Off Time-Nom (toff)
    IGBT Type
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Current - Collector (Ic) (Max)
    View Compare
  • IRGP4269DPBF
    IRGP4269DPBF
    2016
    Obsolete
    1 (Unlimited)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP4660DPBF
    2007
    Active
    1 (Unlimited)
    ROHS3 Compliant
    26 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    EAR99
    Insulated Gate BIP Transistors
    330W
    56ns
    Single
    134W
    Standard
    330W
    N-CHANNEL
    1.9V
    100A
    115 ns
    600V
    1.6V
    400V, 48A, 10 Ω, 15V
    1.9V @ 15V, 48A
    140nC
    144A
    60ns/145ns
    625μJ (on), 1.28mJ (off)
    20V
    6.5V
    46ns
    20.7mm
    15.87mm
    5.31mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRGP20B120UD-EP
    1999
    Obsolete
    1 (Unlimited)
    RoHS Compliant
    14 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Bulk
    EAR99
    Insulated Gate BIP Transistors
    300W
    -
    Single
    300W
    Standard
    -
    N-CHANNEL
    4.85V
    40A
    300 ns
    1.2kV
    3.05V
    600V, 20A, 5 Ω, 15V
    4.85V @ 15V, 40A
    169nC
    120A
    -
    850μJ (on), 425μJ (off)
    20V
    6V
    -
    -
    -
    -
    No SVHC
    No
    Lead Free
    SILICON
    3
    1.2kV
    40A
    1
    ISOLATED
    50 ns
    POWER CONTROL
    20ns
    204 ns
    TO-247AD
    1200V
    70 ns
    228 ns
    NPT
    -
    -
    -
  • IRGP4630DPBF
    2012
    Obsolete
    1 (Unlimited)
    RoHS Compliant
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    -40°C~175°C TJ
    Tube
    EAR99
    -
    206W
    -
    Single
    -
    Standard
    -
    -
    1.95V
    30A
    100 ns
    600V
    1.65V
    400V, 18A, 22 Ω, 15V
    1.95V @ 15V, 18A
    35nC
    54A
    40ns/105ns
    95μJ (on), 350μJ (off)
    -
    -
    -
    -
    -
    -
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    47A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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