Vishay Siliconix IRFR014PBF

Name: IRFR014PBF
Brand: Vishay Siliconix
SKU: 2480563-IRFR014PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR014PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2480563-IRFR014PBF

Description:: MOSFET N-CH 60V 7.7A DPAK

ECAD Model:

Datasheet:: IRFR014PBF

Specifications

Vishay Siliconix IRFR014PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR014PBF.

Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Number of Pins
3
Supplier Device Package
D-Pak
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
1998
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
7.7A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2.5W Ta 25W Tc
Element Configuration
Single
Power Dissipation
25W
Turn On Delay Time
10 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
7.7A Tc
Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V
Rise Time
50ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
13 ns
Continuous Drain Current (ID)
7.7A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Input Capacitance
300pF
Recovery Time
140 ns
Drain to Source Resistance
200mOhm
Rds On Max
200 mΩ
Height
2.39mm
Length
6.73mm
Width
6.22mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRFR014PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.7A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 200mOhm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFR014PBF Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)

IRFR014PBF Applications
There are a lot of Vishay Siliconix
IRFR014PBF applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IRFR014PBF More Descriptions

Single N-Channel 60 V 0.2 Ohm 11 W Surface Mount Power Mosfet - TO-252-3
N Channel Mosfet, 60V, 7.7A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.2Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
MOSFET, N, 60V, 7.7A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7.7A; Drain Source Voltage Vds:60V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:D-PAK; No. of Pins:3; Alternate Case Style:D-PAK; Current Id Max:7.7A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:5°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:31A; SMD Marking:IRFR014; Termination Type:SMD; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRFR014PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Recovery Time

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Series

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

View Compare
IRFR014PBF

Vishay Siliconix

8 Weeks

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

3

D-Pak

1.437803g

-55°C~150°C TJ

Tube

1998

Active

1 (Unlimited)

150°C

-55°C

60V

MOSFET (Metal Oxide)

7.7A

1

1

2.5W Ta 25W Tc

Single

25W

10 ns

N-Channel

200mOhm @ 4.6A, 10V

4V @ 250μA

300pF @ 25V

7.7A Tc

11nC @ 10V

50ns

60V

10V

±20V

19 ns

13 ns

7.7A

4V

20V

60V

300pF

140 ns

200mOhm

200 mΩ

2.39mm

6.73mm

6.22mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFR12N25DTRPBF

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

2004

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

144W Tc

-

-

-

N-Channel

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR014PBF vs IRFR12N25DTRPBF
IRFR12N25DCTRRP

Infineon Technologies

-

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

D-Pak

-

-55°C~175°C TJ

Tape & Reel (TR)

2001

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

144W Tc

-

-

-

N-Channel

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRFR014PBF vs IRFR12N25DCTRRP
IRFR13N15DTR

Infineon Technologies

-

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

-

-55°C~175°C TJ

Tape & Reel (TR)

2000

Obsolete

1 (Unlimited)

-

-

150V

MOSFET (Metal Oxide)

14A

1

-

86W Tc

-

-

-

N-Channel

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

26ns

-

10V

±30V

-

-

14A

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Contains Lead

HEXFET®

SILICON

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

0.18Ohm

56A

130 mJ

IRFR014PBF vs IRFR13N15DTR

Certification

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IRFR014PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR 014PBF DISTI #IRFR 014PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK RoHS: Compliant	2268	1 $0.8601 10 $0.7141 100 $0.5818 500 $0.5244 1000 $0.361
IRFR014TRPBF DISTI #IRFR014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK RoHS: Compliant	7061	1 $1.03 10 $0.899 100 $0.6935 500 $0.5137 1000 $0.41096
IRFR014TRPBF DISTI #IRFR014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK RoHS: Compliant	7061	1 $1.03 10 $0.899 100 $0.6935 500 $0.5137 1000 $0.41096
IRFR014TRPBF DISTI #IRFR014TRPBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK RoHS: Compliant	6000	2000 $0.36159
IRFR014PBF DISTI #IRFR014PBF	Vishay Siliconix	MOSFET N-CH 60V 7.7A DPAK RoHS: Compliant	5826	1 $1.28 75 $1.0232 150 $0.89527 525 $0.6943 1050 $0.54813
IRFR 014PBF DISTI #IRFR 014PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK RoHS: Compliant	3995	47 $0.2592 100 $0.2508 250 $0.243 500 $0.2356 1000 $0.2287 2500 $0.2221
IRFR 014PBF DISTI #IRFR 014PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK RoHS: Compliant	2268	16 $0.6993 100 $0.5818 500 $0.5244
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK - Bul RoHS: Not Compliant	0	3000 $0.4299 6000 $0.4169 12000 $0.3999 18000 $0.3889 30000 $0.3779
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK - Bul RoHS: Not Compliant	0	1 $1.09 10 $0.897 25 $0.827 50 $0.758 100 $0.688 500 $0.592 1000 $0.526
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 7.7A, D-PAK, Transistor Po	3017	1 $1.09 10 $0.897 25 $0.827 50 $0.758 100 $0.688 500 $0.592 1000 $0.526
IRFR014PBF. DISTI #IRFR014PBF.	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 7.7A, D-PAK, Transistor Po	0	1 $1.11 10 $0.915 25 $0.844 50 $0.758 100 $0.688 500 $0.592 1000 $0.526
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.2Ohm, RoHS: Compliant	0	3000 $0.65 6000 $0.642 15000 $0.618
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET N-Chan 60V 7.7 Amp RoHS: Compliant	4172	1 $1.09 10 $0.897 100 $0.688 500 $0.592 1000 $0.467 3000 $0.436 6000 $0.414 9000 $0.399
IRFR014 DISTI #IRFR014	Vishay Intertechnologies	MOSFET N-Chan 60V 7.7 Amp RoHS: Not Compliant	0
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	Single N-Channel 60 V 0.2 Ohm 11 W Surface Mount P RoHS: Compliant	55	50 $0.7 250 $0.475 500 $0.455 1000 $0.43 2000 $0.41
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 7.7A DPAK, PK	60	5 $0.868 50 $0.712 100 $0.65 250 $0.608 500 $0.564
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 7.7A DPAK, TU	3755	50 $0.712 100 $0.65 250 $0.608 500 $0.564
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 60V, 4.9A, 25W	275	1 $0.5647 5 $0.3524 25 $0.3111 75 $0.2824 300 $0.264
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	N-Ch 60V 7,7A 25W 0,0R TO252AA RoHS: Compliant	325	25 $0.383 150 $0.263 300 $0.223 600 $0.2135
IRFR014TRLPBF DISTI #IRFR014TRLPBF	Vishay Intertechnologies	N-Ch 60V 7,7A 25W 0,2R TO252AA RoHS: Compliant	0	25 $0.357 100 $0.237 300 $0.197 1000 $0.1895
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET N-Chan 60V 7.7 Amp RoHS: Compliant	0
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET, N, 60V, 7.7A, D-PAK RoHS: Compliant	0	1 $1.73 10 $1.42 100 $1.1 500 $0.937 1000 $0.74 3000 $0.69 6000 $0.656 9000 $0.632
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET, N, 60V, 7.7A, D-PAK RoHS: Compliant	355	1 $1.73 10 $1.42 100 $1.1 500 $0.937 1000 $0.74 3000 $0.69 6000 $0.656 9000 $0.632
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	MOSFET, N, 60V, 7.7A, D-PAK RoHS: Compliant	640	5 $0.659 25 $0.537 100 $0.494 250 $0.465 500 $0.453
IRFR014PBF DISTI #IRFR014PBF	Vishay Intertechnologies	Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK RoHS: Compliant	2268	10 $0.7412 100 $0.5808 500 $0.5238 1000 $0.4063

IRFR014~~(11)~~
IRFR01~~(25)~~
IRFR0~~(54)~~
IRFR~~(57)~~
IRF~~(69)~~

Vishay Siliconix IRFR014PBF

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