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Infineon Technologies IRFR120NCTRLPBF
- Part Number:
- IRFR120NCTRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853974-IRFR120NCTRLPBF
- Description:
- MOSFET N-CH 100V 9.4A DPAK
- ECAD Model:
-
- Datasheet:
- IRFR120NCTRLPBF
Infineon Technologies IRFR120NCTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR120NCTRLPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max48W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs210m Ω @ 5.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds330pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.4A Ta
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
IRFR120NCTRLPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 330pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR120NCTRLPBF Features
a 100V drain to source voltage (Vdss)
IRFR120NCTRLPBF Applications
There are a lot of Infineon Technologies
IRFR120NCTRLPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 330pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFR120NCTRLPBF Features
a 100V drain to source voltage (Vdss)
IRFR120NCTRLPBF Applications
There are a lot of Infineon Technologies
IRFR120NCTRLPBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRFR120NCTRLPBF More Descriptions
MOSFET N-CH 100V 9.4A DPAK
The three parts on the right have similar specifications to IRFR120NCTRLPBF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Supplier Device PackageView Compare
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IRFR120NCTRLPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V100V10V±20V-- -
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2001Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30VD-Pak
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2001Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30VD-Pak
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