Infineon Technologies IRFR12N25DTRPBF
- Part Number:
- IRFR12N25DTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853949-IRFR12N25DTRPBF
- Description:
- MOSFET N-CH 250V 14A DPAK
- Datasheet:
- IRF(R,U)12N25DPbF
Infineon Technologies IRFR12N25DTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR12N25DTRPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max144W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs260m Ω @ 8.4A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
IRFR12N25DTRPBF Overview
A device's maximal input capacitance is 810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR12N25DTRPBF Features
a 250V drain to source voltage (Vdss)
IRFR12N25DTRPBF Applications
There are a lot of Infineon Technologies
IRFR12N25DTRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 810pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFR12N25DTRPBF Features
a 250V drain to source voltage (Vdss)
IRFR12N25DTRPBF Applications
There are a lot of Infineon Technologies
IRFR12N25DTRPBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
IRFR12N25DTRPBF More Descriptions
MOSFET, 250V, 14A, 260 mOhm, 23 nC Qg, D-Pak
Trans MOSFET N-CH 250V 14A 3-Pin(2 Tab) DPAK T/R
MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2000; Transistor Type:MOSFET ;RoHS Compliant: Yes
Trans MOSFET N-CH 250V 14A 3-Pin(2 Tab) DPAK T/R
MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:2000; Transistor Type:MOSFET ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRFR12N25DTRPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Surface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountVoltage - Rated DCCurrent RatingRise TimeContinuous Drain Current (ID)Lead FreeView Compare
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IRFR12N25DTRPBFSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-----------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-Tape & Reel (TR)HEXFET®2004Discontinued1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Tc25nC @ 10V100V10V±20VYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATEDFET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified175°C1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA9.4A0.21Ohm38A100V91 mJROHS3 Compliant------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)48W TcN-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V100V10V±20V----------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)86W TcN-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V-10V±30V-SILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrier-FET General Purpose PowerSINGLEGULL WING260not_compliant30R-PSSO-G2Not Qualified-1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHINGTO-252AA-0.18Ohm56A-130 mJNon-RoHS CompliantSurface Mount150V14A26ns14AContains Lead
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