Infineon Technologies IRFR120NTRRPBF

Name: IRFR120NTRRPBF
Brand: Infineon Technologies
SKU: 2854519-IRFR120NTRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR120NTRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854519-IRFR120NTRRPBF

Description:: MOSFET N-CH 100V 9.4A DPAK

ECAD Model:

Datasheet:: IRFR120NTRRPBF

Specifications

Infineon Technologies IRFR120NTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR120NTRRPBF.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
48W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
210m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.4A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
9.4A
Drain-source On Resistance-Max
0.21Ohm
Pulsed Drain Current-Max (IDM)
38A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
91 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR120NTRRPBF Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 91 mJ.A device's maximal input capacitance is 330pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 9.4A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 38A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 100V.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFR120NTRRPBF Features
the avalanche energy rating (Eas) is 91 mJ
based on its rated peak drain current 38A.
a 100V drain to source voltage (Vdss)

IRFR120NTRRPBF Applications
There are a lot of Infineon Technologies
IRFR120NTRRPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRFR120NTRRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;D-Pak (TO-252AA);PD 48W
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:9.4A; On Resistance, Rds(on):210mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRFR120NTRRPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Operating Temperature

Mount

Voltage - Rated DC

Current Rating

Rise Time

Continuous Drain Current (ID)

Lead Free

View Compare
IRFR120NTRRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

48W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Tc

25nC @ 10V

100V

10V

±20V

TO-252AA

9.4A

0.21Ohm

38A

100V

91 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-
IRFR024NTRRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

45W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

55V

10V

±20V

TO-252AA

17A

0.075Ohm

68A

55V

71 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

IRFR120NTRRPBF vs IRFR024NTRRPBF
IRFR12N25DTRRP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-55°C~175°C TJ

-

-

-

-

-

-

IRFR120NTRRPBF vs IRFR12N25DTRRP
IRFR13N15DTR

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-55°C~175°C TJ

Surface Mount

150V

14A

26ns

14A

Contains Lead

IRFR120NTRRPBF vs IRFR13N15DTR