Vishay Siliconix IRFR014TRLPBF
- Part Number:
- IRFR014TRLPBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2854831-IRFR014TRLPBF
- Description:
- MOSFET N-CH 60V 7.7A DPAK
- Datasheet:
- IRFR014TRLPBF
Vishay Siliconix IRFR014TRLPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR014TRLPBF.
- Factory Lead Time8 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Number of Pins3
- Supplier Device PackageD-Pak
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.5W Ta 25W Tc
- Element ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds300pF @ 25V
- Current - Continuous Drain (Id) @ 25°C7.7A Tc
- Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
- Rise Time50ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)7.7A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- Input Capacitance300pF
- Drain to Source Resistance200mOhm
- Rds On Max200 mΩ
- Height2.39mm
- Length6.73mm
- Width6.22mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRFR014TRLPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.7A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 200mOhm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFR014TRLPBF Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFR014TRLPBF Applications
There are a lot of Vishay Siliconix
IRFR014TRLPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 300pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 7.7A amps.In this device, the drain-source breakdown voltage is 60V and VGS=60V, so the drain-source breakdown voltage is 60V in this case.It is [13 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 200mOhm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFR014TRLPBF Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFR014TRLPBF Applications
There are a lot of Vishay Siliconix
IRFR014TRLPBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRFR014TRLPBF More Descriptions
IRFR014 Series 60 V 7.7 A 2.5 W SMT N-Channel Power Mosfet - TO-252-3
Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK T/R - TR
Mosfet N-Channel 60V Rohs Compliant: No
N-Ch 60V 7,7A 25W 0,2R TO252AA
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
null 7.7A 200mΩ@4.6A,10V null TO-252 MOSFETs ROHS
Trans MOSFET N-CH 60V 7.7A 3-Pin(2 Tab) DPAK T/R - TR
Mosfet N-Channel 60V Rohs Compliant: No
N-Ch 60V 7,7A 25W 0,2R TO252AA
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
null 7.7A 200mΩ@4.6A,10V null TO-252 MOSFETs ROHS
The three parts on the right have similar specifications to IRFR014TRLPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusSeriesPublishedView Compare
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IRFR014TRLPBF8 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-633D-Pak1.437803g-55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)112.5W Ta 25W TcSingle2.5W10 nsN-Channel200mOhm @ 4.6A, 10V4V @ 250μA300pF @ 25V7.7A Tc11nC @ 10V50ns60V10V±20V19 ns13 ns7.7A20V60V300pF200mOhm200 mΩ2.39mm6.73mm6.22mmNoROHS3 Compliant---
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--48W Tc---N-Channel210m Ω @ 5.6A, 10V4V @ 250μA330pF @ 25V9.4A Ta25nC @ 10V-100V10V±20V-------------HEXFET®2004
-
--Surface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~175°C TJTape & Reel (TR)Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--144W Tc---N-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V-250V10V±30V-------------HEXFET®2004
-
-Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63----55°C~150°C TJTape & Reel (TR)Active1 (Unlimited)--MOSFET (Metal Oxide)--25W Tc---N-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V-50V10V±20V--8.2A---------Non-RoHS Compliant-2016
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