Infineon Technologies IRFR024NTRRPBF

Name: IRFR024NTRRPBF
Brand: Infineon Technologies
SKU: 2854122-IRFR024NTRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR024NTRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854122-IRFR024NTRRPBF

Description:: MOSFET N-CH 55V 17A DPAK

ECAD Model:

Datasheet:: IRFR024NTRRPBF

Specifications

Infineon Technologies IRFR024NTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR024NTRRPBF.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Operating Temperature (Max)
175°C
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
45W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
75m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
370pF @ 25V
Current - Continuous Drain (Id) @ 25°C
17A Tc
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
JEDEC-95 Code
TO-252AA
Drain Current-Max (Abs) (ID)
17A
Drain-source On Resistance-Max
0.075Ohm
Pulsed Drain Current-Max (IDM)
68A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
71 mJ
RoHS Status
ROHS3 Compliant

Description

IRFR024NTRRPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 71 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 370pF @ 25V.17A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 68A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFR024NTRRPBF Features
the avalanche energy rating (Eas) is 71 mJ
based on its rated peak drain current 68A.
a 55V drain to source voltage (Vdss)

IRFR024NTRRPBF Applications
There are a lot of Infineon Technologies
IRFR024NTRRPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRFR024NTRRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:17A; On Resistance, Rds(on):75mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRFR024NTRRPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Operating Temperature

Mount

Continuous Drain Current (ID)

Voltage - Rated DC

Current Rating

Rise Time

Lead Free

View Compare
IRFR024NTRRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

YES

SILICON

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

45W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

75m Ω @ 10A, 10V

4V @ 250μA

370pF @ 25V

17A Tc

20nC @ 10V

55V

10V

±20V

TO-252AA

17A

0.075Ohm

68A

55V

71 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-
IRFR12N25DCTRLP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

D-Pak

-55°C~175°C TJ

-

-

-

-

-

-

IRFR024NTRRPBF vs IRFR12N25DCTRLP
IRFR010TRR

Vishay Siliconix

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

-

-55°C~150°C TJ

Surface Mount

8.2A

-

-

-

-

IRFR024NTRRPBF vs IRFR010TRR
IRFR13N15DTR

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

SILICON

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

-

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

-

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

-

10V

±30V

TO-252AA

-

0.18Ohm

56A

-

130 mJ

Non-RoHS Compliant

-

-55°C~175°C TJ

Surface Mount

14A

150V

14A

26ns

Contains Lead

IRFR024NTRRPBF vs IRFR13N15DTR