Vishay Siliconix IRFR010TRR
- Part Number:
- IRFR010TRR
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2853439-IRFR010TRR
- Description:
- MOSFET N-CH 50V 8.2A DPAK
- Datasheet:
- IRFR010TRR
Vishay Siliconix IRFR010TRR technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRFR010TRR.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max25W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs200m Ω @ 4.6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8.2A Tc
- Gate Charge (Qg) (Max) @ Vgs10nC @ 10V
- Drain to Source Voltage (Vdss)50V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)8.2A
- RoHS StatusNon-RoHS Compliant
IRFR010TRR Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.2A. Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR010TRR Features
a continuous drain current (ID) of 8.2A
a 50V drain to source voltage (Vdss)
IRFR010TRR Applications
There are a lot of Vishay Siliconix
IRFR010TRR applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 250pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.2A. Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR010TRR Features
a continuous drain current (ID) of 8.2A
a 50V drain to source voltage (Vdss)
IRFR010TRR Applications
There are a lot of Vishay Siliconix
IRFR010TRR applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRFR010TRR More Descriptions
MOSFET N-CH 50V 8.2A DPAK
CoC and 2-years warranty / RFQ for pricing
CoC and 2-years warranty / RFQ for pricing
The three parts on the right have similar specifications to IRFR010TRR.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusSeriesSupplier Device PackageTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationRise TimeJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeView Compare
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IRFR010TRRSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)MOSFET (Metal Oxide)25W TcN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V50V10V±20V8.2ANon-RoHS Compliant-----------------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V--HEXFET®---------------------------
-
-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)2001Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V--HEXFET®D-Pak--------------------------
-
Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)86W TcN-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V-10V±30V14ANon-RoHS CompliantHEXFET®-SILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power150VSINGLEGULL WING260not_compliant14A30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING26nsTO-252AA0.18Ohm56A130 mJContains Lead
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