Infineon Technologies IRFR13N15DTR

Name: IRFR13N15DTR
Brand: Infineon Technologies
SKU: 2853429-IRFR13N15DTR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR13N15DTR

Manufacturer:: Infineon Technologies

Ventron No:: 2853429-IRFR13N15DTR

Description:: MOSFET N-CH 150V 14A DPAK

ECAD Model:

Datasheet:: IRFR13N15D, IRFU13N15D

Specifications

Infineon Technologies IRFR13N15DTR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR13N15DTR.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2000
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory
FET General Purpose Power
Voltage - Rated DC
150V
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Current Rating
14A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
86W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
180m Ω @ 8.3A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
620pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
29nC @ 10V
Rise Time
26ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Continuous Drain Current (ID)
14A
JEDEC-95 Code
TO-252AA
Drain-source On Resistance-Max
0.18Ohm
Pulsed Drain Current-Max (IDM)
56A
Avalanche Energy Rating (Eas)
130 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

IRFR13N15DTR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 130 mJ.The maximum input capacitance of this device is 620pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.There is no pulsed drain current maximum for this device based on its rated peak drain current 56A.Using drive voltage (10V), this device helps reduce its power consumption.

IRFR13N15DTR Features
the avalanche energy rating (Eas) is 130 mJ
a continuous drain current (ID) of 14A
based on its rated peak drain current 56A.

IRFR13N15DTR Applications
There are a lot of Infineon Technologies
IRFR13N15DTR applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRFR13N15DTR More Descriptions

MOSFET, 150V, 14A, 180 mOhm, 19 nC Qg, D-Pak
Trans MOSFET N-CH 150V 14A 3-Pin(2 Tab) DPAK T/R
MURATA - GRT1555C1H220JA02D - CAP, MLCC, AUTO, C0G, 22PF, 50V, 0402

Product Comparison

The three parts on the right have similar specifications to IRFR13N15DTR.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
IRFR13N15DTR

Infineon Technologies

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

FET General Purpose Power

150V

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

not_compliant

14A

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

86W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

180m Ω @ 8.3A, 10V

5.5V @ 250μA

620pF @ 25V

14A Tc

29nC @ 10V

26ns

10V

±30V

14A

TO-252AA

0.18Ohm

56A

130 mJ

Non-RoHS Compliant

Contains Lead

-

-

-
IRFR12N25DCTRLP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

D-Pak

250V

IRFR13N15DTR vs IRFR12N25DCTRLP
IRFR12N25DCTRRP

Infineon Technologies

-

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

144W Tc

-

-

N-Channel

-

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

-

10V

±30V

-

-

-

-

-

-

-

D-Pak

250V

IRFR13N15DTR vs IRFR12N25DCTRRP
IRFR010TRR

Vishay Siliconix

Surface Mount

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Active

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

25W Tc

-

-

N-Channel

-

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

-

10V

±20V

8.2A

-

-

-

-

Non-RoHS Compliant

-

-

50V

IRFR13N15DTR vs IRFR010TRR

Certification

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IRFR13N15DTR Specification

Part Number	Manufacturers	Description	Stock	Price
IRFR13N15DTRPBF DISTI #V72:2272_13892208	Infineon Technologies AG	Trans MOSFET N-CH 150V 14A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	381	1 $1.4919 10 $1.0786 25 $0.8825 100 $0.7438 250 $0.6694 500 $0.6445 1000 $0.5757 3000 $0.5695
IRFR13N15DTRPBF DISTI #V36:1790_13892208	Infineon Technologies AG	Trans MOSFET N-CH 150V 14A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	0
IRFR13N15DTR DISTI #IRFR13N15DTR-ND	Infineon Technologies AG	MOSFET N-CH 150V 14A DPAK RoHS: Not Compliant	0
IRFR13N15DTRL DISTI #IRFR13N15DTRL-ND	Infineon Technologies AG	MOSFET N-CH 150V 14A DPAK RoHS: Not Compliant	0
IRFR13N15DTRR DISTI #IRFR13N15DTRR-ND	Infineon Technologies AG	MOSFET N-CH 150V 14A DPAK RoHS: Not Compliant	0
IRFR13N15DTRPBF DISTI #IRFR13N15DTRPBF-ND	Infineon Technologies AG	MOSFET N-CH 150V 14A DPAK RoHS: Compliant	0	6000 $0.50246
IRFR13N15DTRPBF DISTI #33643986	Infineon Technologies AG	Trans MOSFET N-CH 150V 14A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	6000	2000 $0.4002
IRFR13N15DTRPBF DISTI #30209795	Infineon Technologies AG	Trans MOSFET N-CH 150V 14A 3-Pin(2 Tab) DPAK T/R RoHS: Compliant	381	18 $1.0786 25 $0.8825 100 $0.7438 250 $0.6694 500 $0.6445 1000 $0.5757 3000 $0.5695
IRFR13N15DTRPBF DISTI #IRFR13N15DTRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 14A 3-Pin(2 Tab) DPAK T/R - RoHS: Compliant	0	6000 $0.4129 12000 $0.3979 18000 $0.3839 30000 $0.3709 60000 $0.3639
IRFR13N15DTRPBF DISTI #13AC9122	Infineon Technologies AG	MOSFET, N-CH, 150V, 14A, TO-252AA, Transistor Pol	4882	1 $1.46 10 $1.26 25 $1.14 50 $1.05 100 $0.89 250 $0.798 500 $0.705 1000 $0.68
IRFR13N15DTRPBF DISTI #70018994	Infineon Technologies AG	MOSFET, 150V, 14A, 180 MOHM, 19 NC QG, D-PAK RoHS: Compliant	0	6000 $0.49
IRFR13N15DTRPBF DISTI #942-IRFR13N15DTRPBF	Infineon Technologies AG	MOSFET MOSFT 150V 14A 180mOhm 19nC RoHS: Compliant	4921	1 $1.17 10 $1 100 $0.772 500 $0.682 1000 $0.539
IRFR13N15DTRPBF DISTI #2725951	Infineon Technologies AG	MOSFET, N-CH, 150V, 14A, TO-252AA	4896	5 $1.07 25 $0.963 100 $0.744
IRFR13N15DTRPBF DISTI #XSKDRABS0036377	Infineon Technologies AG	RoHS: Compliant	6000	2000 $0.59724 6000 $0.4645
IRFR13N15DTRLP DISTI #1298545	Infineon Technologies AG	RoHS: Compliant	0	1 $1.86 10 $1.53 100 $1.24 250 $1.11 500 $0.981 1000 $0.912 3000 $0.881 9000 $0.825
IRFR13N15DTRPBF DISTI #2725951	Infineon Technologies AG	MOSFET, N-CH, 150V, 14A, TO-252AA RoHS: Compliant	4882	5 $1.76 25 $1.53 100 $1.25

IRFR13N~~(21)~~
IRFR13~~(25)~~
IRFR1~~(57)~~
IRFR~~(57)~~
IRF~~(69)~~

Infineon Technologies IRFR13N15DTR

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