Infineon Technologies IRFR12N25DTRRP
- Part Number:
- IRFR12N25DTRRP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853917-IRFR12N25DTRRP
- Description:
- MOSFET N-CH 250V 14A DPAK
- Datasheet:
- IRF(R,U)12N25DPbF
Infineon Technologies IRFR12N25DTRRP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR12N25DTRRP.
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max144W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs260m Ω @ 8.4A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds810pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Drain to Source Voltage (Vdss)250V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
IRFR12N25DTRRP Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 810pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR12N25DTRRP Features
a 250V drain to source voltage (Vdss)
IRFR12N25DTRRP Applications
There are a lot of Infineon Technologies
IRFR12N25DTRRP applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 810pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 250V.Using drive voltage (10V) reduces this device's overall power consumption.
IRFR12N25DTRRP Features
a 250V drain to source voltage (Vdss)
IRFR12N25DTRRP Applications
There are a lot of Infineon Technologies
IRFR12N25DTRRP applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRFR12N25DTRRP More Descriptions
MOSFET N-CH 250V 14A DPAK
The three parts on the right have similar specifications to IRFR12N25DTRRP.
-
ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Supplier Device PackageMountContinuous Drain Current (ID)RoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationRise TimeJEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeView Compare
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IRFR12N25DTRRPSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260m Ω @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30V-------------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2001Obsolete1 (Unlimited)MOSFET (Metal Oxide)144W TcN-Channel260mOhm @ 8.4A, 10V5V @ 250μA810pF @ 25V14A Tc35nC @ 10V250V10V±30VD-Pak-----------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)-2016Active1 (Unlimited)MOSFET (Metal Oxide)25W TcN-Channel200m Ω @ 4.6A, 10V4V @ 250μA250pF @ 25V8.2A Tc10nC @ 10V50V10V±20V-Surface Mount8.2ANon-RoHS Compliant--------------------------
-
Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)HEXFET®2000Obsolete1 (Unlimited)MOSFET (Metal Oxide)86W TcN-Channel180m Ω @ 8.3A, 10V5.5V @ 250μA620pF @ 25V14A Tc29nC @ 10V-10V±30V-Surface Mount14ANon-RoHS CompliantSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierFET General Purpose Power150VSINGLEGULL WING260not_compliant14A30R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING26nsTO-252AA0.18Ohm56A130 mJContains Lead
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