Infineon Technologies IRFR12N25DCTRRP

Name: IRFR12N25DCTRRP
Brand: Infineon Technologies
SKU: 2853904-IRFR12N25DCTRRP
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRFR12N25DCTRRP

Manufacturer:: Infineon Technologies

Ventron No:: 2853904-IRFR12N25DCTRRP

Description:: MOSFET N-CH 250V 14A DPAK

ECAD Model:

Datasheet:: IRF(R,U)12N25D

Specifications

Infineon Technologies IRFR12N25DCTRRP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRFR12N25DCTRRP.

Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads Tab), SC-63
Supplier Device Package
D-Pak
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2001
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
144W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
260mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
810pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V

Description

IRFR12N25DCTRRP Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 810pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFR12N25DCTRRP Features
a 250V drain to source voltage (Vdss)

IRFR12N25DCTRRP Applications
There are a lot of Infineon Technologies
IRFR12N25DCTRRP applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

IRFR12N25DCTRRP More Descriptions

MOSFET N-CH 250V 14A DPAK

Product Comparison

The three parts on the right have similar specifications to IRFR12N25DCTRRP.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Surface Mount

Transistor Element Material

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Number of Elements

Configuration

Operating Mode

Case Connection

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Continuous Drain Current (ID)

View Compare
IRFR12N25DCTRRP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

D-Pak

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2001

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

144W Tc

N-Channel

260mOhm @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRFR120NTRRPBF

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-

Tape & Reel (TR)

HEXFET®

2004

Discontinued

1 (Unlimited)

MOSFET (Metal Oxide)

48W Tc

N-Channel

210m Ω @ 5.6A, 10V

4V @ 250μA

330pF @ 25V

9.4A Tc

25nC @ 10V

100V

10V

±20V

YES

SILICON

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED

FET General Purpose Power

SINGLE

GULL WING

260

not_compliant

30

R-PSSO-G2

Not Qualified

175°C

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

TO-252AA

9.4A

0.21Ohm

38A

100V

91 mJ

ROHS3 Compliant

-

-

IRFR12N25DCTRRP vs IRFR120NTRRPBF
IRFR12N25DTRRP

Infineon Technologies

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

144W Tc

N-Channel

260m Ω @ 8.4A, 10V

5V @ 250μA

810pF @ 25V

14A Tc

35nC @ 10V

250V

10V

±30V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

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-

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-

-

-

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-

IRFR12N25DCTRRP vs IRFR12N25DTRRP
IRFR010TRR

Vishay Siliconix

Surface Mount

TO-252-3, DPak (2 Leads Tab), SC-63

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

Active

1 (Unlimited)

MOSFET (Metal Oxide)

25W Tc

N-Channel

200m Ω @ 4.6A, 10V

4V @ 250μA

250pF @ 25V

8.2A Tc

10nC @ 10V

50V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

Surface Mount

8.2A

IRFR12N25DCTRRP vs IRFR010TRR