Infineon Technologies IRF1405ZS-7P
- Part Number:
- IRF1405ZS-7P
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492734-IRF1405ZS-7P
- Description:
- MOSFET N-CH 55V 120A D2PAK7
- Datasheet:
- IRF1405ZS-7P
Infineon Technologies IRF1405ZS-7P technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZS-7P.
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab), TO-263CB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2006
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Terminal FinishTIN LEAD
- Additional FeatureAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)225
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PSSO-G6
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max230W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.9m Ω @ 88A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds5360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs230nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)120A
- Drain-source On Resistance-Max0.0049Ohm
- Pulsed Drain Current-Max (IDM)590A
- DS Breakdown Voltage-Min55V
- Avalanche Energy Rating (Eas)810 mJ
- RoHS StatusNon-RoHS Compliant
IRF1405ZS-7P Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 810 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5360pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 120A.Pulsed drain current is maximum rated peak drain current 590A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF1405ZS-7P Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 590A.
a 55V drain to source voltage (Vdss)
IRF1405ZS-7P Applications
There are a lot of Infineon Technologies
IRF1405ZS-7P applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 810 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5360pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 120A.Pulsed drain current is maximum rated peak drain current 590A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF1405ZS-7P Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 590A.
a 55V drain to source voltage (Vdss)
IRF1405ZS-7P Applications
There are a lot of Infineon Technologies
IRF1405ZS-7P applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF1405ZS-7P More Descriptions
MOSFET N-CH 55V 120A D2PAK7
OEMs, CMs ONLY (NO BROKERS)
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IRF1405ZS-7P.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusMountNumber of PinsMax Operating TemperatureMin Operating TemperatureSubcategoryElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningSupplier Device PackageView Compare
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IRF1405ZS-7PSurface MountTO-263-7, D2Pak (6 Leads Tab), TO-263CBYESSILICON-55°C~175°C TJTubeHEXFET®2006e0Obsolete1 (Unlimited)6EAR99TIN LEADAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEMOSFET (Metal Oxide)SINGLEGULL WING22530R-PSSO-G6Not Qualified1SINGLE WITH BUILT-IN DIODE230W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING4.9m Ω @ 88A, 10V4V @ 150μA5360pF @ 25V120A Tc230nC @ 10V55V10V±20V120A0.0049Ohm590A55V810 mJNon-RoHS Compliant--------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---Tape & Reel (TR)HEXFET®2004e3Discontinued1 (Unlimited)2EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYMOSFET (Metal Oxide)-GULL WING26030R-PSSO-G2-1-3.8W Ta 160W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-10V±20V----420 mJROHS3 CompliantSurface Mount3175°C-55°CFET General Purpose PowerSingle3.8W11 ns56ns40 ns45 ns42A20V100V4.826mm10.668mm9.65mmNo-
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------200W Tc--N-Channel-12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20V-----Non-RoHS Compliant------------------D2PAK
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTubeHEXFET®--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)--------200W Tc--N-Channel-5.3mOhm @ 101A, 10V4V @ 250μA5.48pF @ 25V131A Tc260nC @ 10V55V10V±20V-----ROHS3 Compliant------------------D2PAK
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