IRF1405STRR

Infineon Technologies IRF1405STRR

Part Number:
IRF1405STRR
Manufacturer:
Infineon Technologies
Ventron No:
2853782-IRF1405STRR
Description:
MOSFET N-CH 55V 131A D2PAK
ECAD Model:
Datasheet:
IRF1405STRR

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Specifications
Infineon Technologies IRF1405STRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405STRR.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn) - with Nickel (Ni) barrier
  • Additional Feature
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    200W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    5.3m Ω @ 101A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5480pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    131A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Drain Current-Max (Abs) (ID)
    75A
  • Drain-source On Resistance-Max
    0.0053Ohm
  • Pulsed Drain Current-Max (IDM)
    680A
  • DS Breakdown Voltage-Min
    55V
  • Avalanche Energy Rating (Eas)
    590 mJ
  • RoHS Status
    Non-RoHS Compliant
Description
IRF1405STRR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 590 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5480pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 75A.Pulsed drain current is maximum rated peak drain current 680A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF1405STRR Features
the avalanche energy rating (Eas) is 590 mJ
based on its rated peak drain current 680A.
a 55V drain to source voltage (Vdss)


IRF1405STRR Applications
There are a lot of Infineon Technologies
IRF1405STRR applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF1405STRR More Descriptions
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 55V, 131A, 5.3 mOhm, 170 nC Qg, D2-Pak
MOSFET N-CH 55V 131A D2PAK
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IRF1405STRR.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Mount
    Number of Pins
    Max Operating Temperature
    Min Operating Temperature
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    Supplier Device Package
    View Compare
  • IRF1405STRR
    IRF1405STRR
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    200W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    5.3m Ω @ 101A, 10V
    4V @ 250μA
    5480pF @ 25V
    131A Tc
    260nC @ 10V
    55V
    10V
    ±20V
    75A
    0.0053Ohm
    680A
    55V
    590 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRRPBF
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    GULL WING
    260
    30
    R-PSSO-G2
    -
    1
    -
    3.8W Ta 160W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    420 mJ
    ROHS3 Compliant
    Surface Mount
    3
    175°C
    -55°C
    Single
    3.8W
    11 ns
    56ns
    40 ns
    45 ns
    42A
    20V
    100V
    4.826mm
    10.668mm
    9.65mm
    No
    -
  • IRF1104STRL
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    2.4W Ta 170W Tc
    -
    -
    N-Channel
    -
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    40V
    10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
  • IRF1310NSTRR
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    YES
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.8W Ta 160W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    100V
    10V
    ±20V
    42A
    0.036Ohm
    140A
    100V
    420 mJ
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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