Infineon Technologies IRF1010NSTRR

Name: IRF1010NSTRR
Brand: Infineon Technologies
SKU: 2853709-IRF1010NSTRR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1010NSTRR

Manufacturer:: Infineon Technologies

Ventron No:: 2853709-IRF1010NSTRR

Description:: MOSFET N-CH 55V 85A D2PAK

ECAD Model:

Datasheet:: IRF1010NSTRR

Specifications

Infineon Technologies IRF1010NSTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010NSTRR.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2002
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
180W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 43A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C
85A Tc
Gate Charge (Qg) (Max) @ Vgs
120nC @ 10V
Drain to Source Voltage (Vdss)
55V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
75A
Drain-source On Resistance-Max
0.011Ohm
Pulsed Drain Current-Max (IDM)
290A
DS Breakdown Voltage-Min
55V
Avalanche Energy Rating (Eas)
250 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF1010NSTRR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 250 mJ.The maximum input capacitance of this device is 3210pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 75A.There is no pulsed drain current maximum for this device based on its rated peak drain current 290A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1010NSTRR Features
the avalanche energy rating (Eas) is 250 mJ
based on its rated peak drain current 290A.
a 55V drain to source voltage (Vdss)

IRF1010NSTRR Applications
There are a lot of Infineon Technologies
IRF1010NSTRR applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF1010NSTRR More Descriptions

MOSFET N-CH 55V 85A D2PAK

Product Comparison

The three parts on the right have similar specifications to IRF1010NSTRR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Max Operating Temperature

Min Operating Temperature

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

Supplier Device Package

View Compare
IRF1010NSTRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

180W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

11m Ω @ 43A, 10V

4V @ 250μA

3210pF @ 25V

85A Tc

120nC @ 10V

55V

10V

±20V

75A

0.011Ohm

290A

55V

250 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1310NSTRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

-

1

-

3.8W Ta 160W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

420 mJ

ROHS3 Compliant

Surface Mount

3

175°C

-55°C

Single

3.8W

11 ns

56ns

40 ns

45 ns

42A

20V

100V

4.826mm

10.668mm

9.65mm

No

-

IRF1010NSTRR vs IRF1310NSTRRPBF
IRF1310NSTRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 160W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

100V

10V

±20V

42A

0.036Ohm

140A

100V

420 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF1010NSTRR vs IRF1310NSTRR
IRF1405SPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

200W Tc

-

-

N-Channel

-

5.3mOhm @ 101A, 10V

4V @ 250μA

5.48pF @ 25V

131A Tc

260nC @ 10V

55V

10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK

IRF1010NSTRR vs IRF1405SPBF