Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRF1104STRL
IRF1104STRL

Infineon Technologies IRF1104STRL

Part Number:
IRF1104STRL
Manufacturer:
Infineon Technologies
Ventron No:
2853784-IRF1104STRL
Description:
MOSFET N-CH 40V 100A D2PAK
ECAD Model:
Datasheet:
IRF1104STRL

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF1104STRL technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1104STRL.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1998
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.4W Ta 170W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    93nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • RoHS Status
    Non-RoHS Compliant
Description
IRF1104STRL Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2900pF @ 25V maximal input capacitance.To operate this transistor, you will need a 40V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF1104STRL Features
a 40V drain to source voltage (Vdss)


IRF1104STRL Applications
There are a lot of Infineon Technologies
IRF1104STRL applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IRF1104STRL More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 40V 100A D2PAK
Product Comparison
The three parts on the right have similar specifications to IRF1104STRL.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Mount
    Number of Pins
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    Surface Mount
    Transistor Element Material
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRF1104STRL
    IRF1104STRL
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.4W Ta 170W Tc
    N-Channel
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    40V
    10V
    ±20V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRRPBF
    IRF1310NSTRRPBF
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    MOSFET (Metal Oxide)
    3.8W Ta 160W Tc
    N-Channel
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    -
    10V
    ±20V
    ROHS3 Compliant
    Surface Mount
    3
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    175°C
    -55°C
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    1
    Single
    ENHANCEMENT MODE
    3.8W
    DRAIN
    11 ns
    SWITCHING
    56ns
    40 ns
    45 ns
    42A
    20V
    100V
    420 mJ
    4.826mm
    10.668mm
    9.65mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF1104STRL vs IRF1310NSTRRPBF
  • IRF1405STRR
    IRF1405STRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    200W Tc
    N-Channel
    5.3m Ω @ 101A, 10V
    4V @ 250μA
    5480pF @ 25V
    131A Tc
    260nC @ 10V
    55V
    10V
    ±20V
    Non-RoHS Compliant
    -
    -
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    -
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    590 mJ
    -
    -
    -
    -
    YES
    SILICON
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    75A
    0.0053Ohm
    680A
    55V
    IRF1104STRL vs IRF1405STRR
  • IRF1310NSTRR
    IRF1310NSTRR
    Infineon Technologies
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    3.8W Ta 160W Tc
    N-Channel
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    100V
    10V
    ±20V
    Non-RoHS Compliant
    -
    -
    e3
    2
    EAR99
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    -
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    420 mJ
    -
    -
    -
    -
    YES
    SILICON
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    42A
    0.036Ohm
    140A
    100V
    IRF1104STRL vs IRF1310NSTRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IRF1104STRL
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.