Infineon Technologies IRF1324SPBF

Name: IRF1324SPBF
Brand: Infineon Technologies
SKU: 2854207-IRF1324SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1324SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854207-IRF1324SPBF

Description:: MOSFET N-CH 24V 195A D2-PAK

ECAD Model:

Datasheet:: IRF1324(L,S)PBF

Specifications

Infineon Technologies IRF1324SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1324SPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Termination
SMD/SMT
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Power Dissipation-Max
300W Tc
Power Dissipation
300W
Turn On Delay Time
17 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
1.65mOhm @ 195A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
7590pF @ 24V
Current - Continuous Drain (Id) @ 25°C
195A Tc
Gate Charge (Qg) (Max) @ Vgs
240nC @ 10V
Rise Time
190ns
Drain to Source Voltage (Vdss)
24V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
120 ns
Turn-Off Delay Time
83 ns
Continuous Drain Current (ID)
340A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
24V
Dual Supply Voltage
24V
Input Capacitance
7.59nF
Drain to Source Resistance
1.65mOhm
Rds On Max
1.65 mΩ
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

IRF1324SPBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 7590pF @ 24V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 340A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=24V. And this device has 24V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 83 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 1.65mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 17 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Operating this transistor requires a 24V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF1324SPBF Features
a continuous drain current (ID) of 340A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 83 ns
single MOSFETs transistor is 1.65mOhm
a threshold voltage of 4V
a 24V drain to source voltage (Vdss)

IRF1324SPBF Applications
There are a lot of Infineon Technologies
IRF1324SPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRF1324SPBF More Descriptions

MOSFET Operating temperature: -55... 175 °C Housing type: D2PAK Polarity: N Power dissipation: 300 W
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Trans MOSFET N-CH Si 24V 340A 3-Pin(2 Tab) D2PAK
Power Field-Effect Transistor, 195A I(D), 24V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 24V 195A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1.65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Package / Case:D2-PAK; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:24V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

Product Comparison

The three parts on the right have similar specifications to IRF1324SPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Element Configuration

Operating Mode

Case Connection

Transistor Application

Avalanche Energy Rating (Eas)

Surface Mount

Transistor Element Material

Terminal Position

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

View Compare
IRF1324SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

-55°C~175°C TJ

Tube

HEXFET®

2008

Obsolete

1 (Unlimited)

SMD/SMT

175°C

-55°C

MOSFET (Metal Oxide)

1

300W Tc

300W

17 ns

N-Channel

1.65mOhm @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

24V

10V

±20V

120 ns

83 ns

340A

4V

20V

24V

24V

7.59nF

1.65mOhm

1.65 mΩ

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1310NSTRRPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-

Tape & Reel (TR)

HEXFET®

2004

Discontinued

1 (Unlimited)

-

175°C

-55°C

MOSFET (Metal Oxide)

1

3.8W Ta 160W Tc

3.8W

11 ns

N-Channel

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

56ns

-

10V

±20V

40 ns

45 ns

42A

-

20V

100V

-

-

-

-

-

4.826mm

10.668mm

9.65mm

-

No

ROHS3 Compliant

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

GULL WING

260

30

R-PSSO-G2

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

420 mJ

-

-

-

-

-

-

-

-

-

IRF1324SPBF vs IRF1310NSTRRPBF
IRF1310NSTRR

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

3.8W Ta 160W Tc

-

-

N-Channel

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

GULL WING

260

30

R-PSSO-G2

-

ENHANCEMENT MODE

DRAIN

SWITCHING

420 mJ

YES

SILICON

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

42A

0.036Ohm

140A

100V

IRF1324SPBF vs IRF1310NSTRR
IRF1010NSTRR

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

180W Tc

-

-

N-Channel

11m Ω @ 43A, 10V

4V @ 250μA

3210pF @ 25V

85A Tc

120nC @ 10V

-

55V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

e3

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

GULL WING

260

30

R-PSSO-G2

-

ENHANCEMENT MODE

DRAIN

SWITCHING

250 mJ

YES

SILICON

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

75A

0.011Ohm

290A

55V

IRF1324SPBF vs IRF1010NSTRR

Certification

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IRF1324~~(11)~~
IRF132~~(12)~~
IRF13~~(48)~~
IRF1~~(69)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF1324SPBF DISTI #IRF1324SPBF	Infineon Technologies AG	MOSFET N-CH 24V 195A D2-PAK RoHS: Compliant	0
IRF1324SPBF DISTI #IRF1324SPBF	Infineon Technologies AG	MOSFET, 24V, 340A, 1.65 MOHM, 160 NC QG, D2-P RoHS: Compliant	0	200 $4.12 400 $4.038 1000 $3.914 2000 $3.749 5000 $3.502
IRF1324SPBF DISTI #IRF1324SPBF	Infineon Technologies AG	MOSFET 24V 1 N-CH HEXFET 1.65mOhms 160nC RoHS: Compliant	0
IRF1324SPBF DISTI #IRF1324SPBF	International Rectifier	RoHS: Compliant	600

Infineon Technologies IRF1324SPBF

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