IRF1324STRLPBF

Infineon Technologies IRF1324STRLPBF

Part Number:
IRF1324STRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2854219-IRF1324STRLPBF
Description:
MOSFET N-CH 24V 195A D2PAK
ECAD Model:
Datasheet:
IRF1324(L,S)PBF

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Infineon Technologies IRF1324STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1324STRLPBF.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    300W Tc
  • Power Dissipation
    300W
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.65mOhm @ 195A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7590pF @ 24V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Rise Time
    190ns
  • Drain to Source Voltage (Vdss)
    24V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    120 ns
  • Turn-Off Delay Time
    83 ns
  • Continuous Drain Current (ID)
    195A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    24V
  • Input Capacitance
    7.59nF
  • Rds On Max
    1.65 mΩ
  • Height
    4.826mm
  • Length
    10.668mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
IRF1324STRLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7590pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 24V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 24V.As a result of its turn-off delay time, which is 83 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 24V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF1324STRLPBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 83 ns
a 24V drain to source voltage (Vdss)


IRF1324STRLPBF Applications
There are a lot of Infineon Technologies
IRF1324STRLPBF applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF1324STRLPBF More Descriptions
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Trans MOSFET N-CH 24V 340A 3-Pin(2 Tab) D2PAK T/R
MOSFET, 24V, 340A, 1.65 MOHM, 160 NC QG, D2-PAK
N CH MOSFET, HEXFET, 24V 340A, D2-PAK
CAP CER 22PF 200V C0G/NP0 0805
Power Field-Effect Transistors
Product Comparison
The three parts on the right have similar specifications to IRF1324STRLPBF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Power Dissipation-Max
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Rds On Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Threshold Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    REACH SVHC
    Lead Free
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRF1324STRLPBF
    IRF1324STRLPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2009
    Obsolete
    1 (Unlimited)
    175°C
    -55°C
    MOSFET (Metal Oxide)
    300W Tc
    300W
    17 ns
    N-Channel
    1.65mOhm @ 195A, 10V
    4V @ 250μA
    7590pF @ 24V
    195A Tc
    240nC @ 10V
    190ns
    24V
    10V
    ±20V
    120 ns
    83 ns
    195A
    20V
    24V
    7.59nF
    1.65 mΩ
    4.826mm
    10.668mm
    9.65mm
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1405ZSPBF
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Discontinued
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    230W Tc
    230W
    18 ns
    N-Channel
    4.9m Ω @ 75A, 10V
    4V @ 250μA
    4780pF @ 25V
    75A Tc
    180nC @ 10V
    110ns
    -
    10V
    ±20V
    82 ns
    48 ns
    75A
    20V
    55V
    -
    -
    4.826mm
    10.668mm
    9.65mm
    No
    ROHS3 Compliant
    SILICON
    e3
    2
    EAR99
    4.9MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    1
    Single
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    4V
    600A
    420 mJ
    4 V
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    3.8W Ta 160W Tc
    -
    -
    N-Channel
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    SILICON
    e3
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    140A
    420 mJ
    -
    -
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    42A
    0.036Ohm
    100V
  • IRF1010NSTRR
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    180W Tc
    -
    -
    N-Channel
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    -
    55V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    SILICON
    e3
    2
    EAR99
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    290A
    250 mJ
    -
    -
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    75A
    0.011Ohm
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • 25 March 2024

    USB3300-EZK Manufacturer, Pinout, Features and Application

    Ⅰ. USB3300-EZK descriptionⅡ. Manufacturer of USB3300-EZKⅢ. Pin diagram of USB3300-EZKⅣ. Technical parameters of USB3300-EZKⅤ. Application of USB3300-EZKⅥ. Functional features of USB3300-EZKⅦ. How does USB3300-EZK support OTG protocol?Ⅰ. USB3300-EZK...
  • 26 March 2024

    Everything You Need to Know About the TL431 Voltage Regulator

    Ⅰ. What is TL431 regulator?Ⅱ. Main features of TL431Ⅲ. TL431 ratingsⅣ. How to measure the quality of TL431?Ⅴ. What can it be used for?Ⅵ. How to distinguish the...
  • 26 March 2024

    A Complete Guide to the TB6600HG

    Ⅰ. TB6600HG descriptionⅡ. Specifications of TB6600HGⅢ. Operating conditions of TB6600HGⅣ. How to connect TB6600HG to the control system?Ⅴ. TB6600HG product featuresⅥ. Pin configuration of TB6600HGⅦ. Function description of...
  • 27 March 2024

    LM358P Op-Amp: Characteristics, Package, Layout, Uses and More

    Ⅰ. LM358P descriptionⅡ. Characteristics of LM358PⅢ. Package design of LM358PⅣ. Layout of LM358PⅤ. LM358P usesⅥ. LM358P circuitⅦ. Can LM358 and LM358P be replaced?Ⅷ. How to use LM358P correctly...
  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.