Infineon Technologies IRF1324STRLPBF
- Part Number:
- IRF1324STRLPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854219-IRF1324STRLPBF
- Description:
- MOSFET N-CH 24V 195A D2PAK
- Datasheet:
- IRF1324(L,S)PBF
Infineon Technologies IRF1324STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1324STRLPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max300W Tc
- Power Dissipation300W
- Turn On Delay Time17 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.65mOhm @ 195A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds7590pF @ 24V
- Current - Continuous Drain (Id) @ 25°C195A Tc
- Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
- Rise Time190ns
- Drain to Source Voltage (Vdss)24V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)120 ns
- Turn-Off Delay Time83 ns
- Continuous Drain Current (ID)195A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage24V
- Input Capacitance7.59nF
- Rds On Max1.65 mΩ
- Height4.826mm
- Length10.668mm
- Width9.65mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF1324STRLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7590pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 24V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 24V.As a result of its turn-off delay time, which is 83 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 24V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1324STRLPBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 83 ns
a 24V drain to source voltage (Vdss)
IRF1324STRLPBF Applications
There are a lot of Infineon Technologies
IRF1324STRLPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 7590pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 24V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 24V.As a result of its turn-off delay time, which is 83 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 24V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF1324STRLPBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 24V voltage
the turn-off delay time is 83 ns
a 24V drain to source voltage (Vdss)
IRF1324STRLPBF Applications
There are a lot of Infineon Technologies
IRF1324STRLPBF applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
IRF1324STRLPBF More Descriptions
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package
Trans MOSFET N-CH 24V 340A 3-Pin(2 Tab) D2PAK T/R
MOSFET, 24V, 340A, 1.65 MOHM, 160 NC QG, D2-PAK
N CH MOSFET, HEXFET, 24V 340A, D2-PAK
CAP CER 22PF 200V C0G/NP0 0805
Power Field-Effect Transistors
Trans MOSFET N-CH 24V 340A 3-Pin(2 Tab) D2PAK T/R
MOSFET, 24V, 340A, 1.65 MOHM, 160 NC QG, D2-PAK
N CH MOSFET, HEXFET, 24V 340A, D2-PAK
CAP CER 22PF 200V C0G/NP0 0805
Power Field-Effect Transistors
The three parts on the right have similar specifications to IRF1324STRLPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsElement ConfigurationOperating ModeCase ConnectionTransistor ApplicationThreshold VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsREACH SVHCLead FreeSurface MountTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRF1324STRLPBFSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2009Obsolete1 (Unlimited)175°C-55°CMOSFET (Metal Oxide)300W Tc300W17 nsN-Channel1.65mOhm @ 195A, 10V4V @ 250μA7590pF @ 24V195A Tc240nC @ 10V190ns24V10V±20V120 ns83 ns195A20V24V7.59nF1.65 mΩ4.826mm10.668mm9.65mmNoRoHS Compliant-------------------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTubeHEXFET®2003Discontinued1 (Unlimited)--MOSFET (Metal Oxide)230W Tc230W18 nsN-Channel4.9m Ω @ 75A, 10V4V @ 250μA4780pF @ 25V75A Tc180nC @ 10V110ns-10V±20V82 ns48 ns75A20V55V--4.826mm10.668mm9.65mmNoROHS3 CompliantSILICONe32EAR994.9MOhmMatte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCEFET General Purpose PowerGULL WING26030R-PSSO-G21SingleENHANCEMENT MODEDRAINSWITCHING4V600A420 mJ4 VNo SVHCLead Free-------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)--MOSFET (Metal Oxide)3.8W Ta 160W Tc--N-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V-100V10V±20V-----------Non-RoHS CompliantSILICONe32EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerGULL WING26030R-PSSO-G21-ENHANCEMENT MODEDRAINSWITCHING-140A420 mJ---YESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE42A0.036Ohm100V
-
-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)--MOSFET (Metal Oxide)180W Tc--N-Channel11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V-55V10V±20V-----------Non-RoHS CompliantSILICONe32EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerGULL WING26030R-PSSO-G21-ENHANCEMENT MODEDRAINSWITCHING-290A250 mJ---YESSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE75A0.011Ohm55V
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