Infineon Technologies IRF1405SPBF
- Part Number:
- IRF1405SPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2851850-IRF1405SPBF
- Description:
- MOSFET N-CH 55V 131A D2PAK
- Datasheet:
- IRF1405(S,L)PbF
Infineon Technologies IRF1405SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405SPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max200W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs5.3mOhm @ 101A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5.48pF @ 25V
- Current - Continuous Drain (Id) @ 25°C131A Tc
- Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRF1405SPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5.48pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF1405SPBF Features
a 55V drain to source voltage (Vdss)
IRF1405SPBF Applications
There are a lot of Rochester Electronics, LLC
IRF1405SPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5.48pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF1405SPBF Features
a 55V drain to source voltage (Vdss)
IRF1405SPBF Applications
There are a lot of Rochester Electronics, LLC
IRF1405SPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF1405SPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.6Milliohms;ID 131A;D2Pak;PD 200W;VGS /-2
Trans MOSFET N-CH Si 55V 131A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 55V 131A D2PAK
Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 131A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
MOSFET, N, 55V, 131A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:131A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:680A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0053ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V
Trans MOSFET N-CH Si 55V 131A 3-Pin(2 Tab) D2PAK Tube / MOSFET N-CH 55V 131A D2PAK
Single N-Channel 55 V 5.3 mOhm 170 nC HEXFET® Power Mosfet - D2PAK
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N Channel Mosfet, 55V, 131A, D2-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:131A; On Resistance Rds(On):0.0053Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
MOSFET, N, 55V, 131A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:131A; Resistance, Rds On:0.0053ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Case Style, Alternate:D2-PAK; Current, Idm Pulse:680A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0053ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:55V; Voltage, Vds Max:55V; Voltage, Vgs th Max:4V
The three parts on the right have similar specifications to IRF1405SPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusPublishedSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF1405SPBFSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)200W TcN-Channel5.3mOhm @ 101A, 10V4V @ 250μA5.48pF @ 25V131A Tc260nC @ 10V55V10V±20VROHS3 Compliant--------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.4W Ta 170W TcN-Channel9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V40V10V±20VNon-RoHS Compliant1998------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)200W TcN-Channel12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20VNon-RoHS Compliant2002------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)180W TcN-Channel11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V55V10V±20VNon-RoHS Compliant2002YESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.011Ohm290A55V250 mJ
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