Infineon Technologies IRF1310NSTRR

Name: IRF1310NSTRR
Brand: Infineon Technologies
SKU: 2853723-IRF1310NSTRR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1310NSTRR

Manufacturer:: Infineon Technologies

Ventron No:: 2853723-IRF1310NSTRR

Description:: MOSFET N-CH 100V 42A D2PAK

ECAD Model:

Datasheet:: IRF1310NSTRR

Specifications

Infineon Technologies IRF1310NSTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1310NSTRR.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.8W Ta 160W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
36m Ω @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
42A
Drain-source On Resistance-Max
0.036Ohm
Pulsed Drain Current-Max (IDM)
140A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
420 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF1310NSTRR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 420 mJ.The maximum input capacitance of this device is 1900pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 42A.There is no pulsed drain current maximum for this device based on its rated peak drain current 140A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1310NSTRR Features
the avalanche energy rating (Eas) is 420 mJ
based on its rated peak drain current 140A.
a 100V drain to source voltage (Vdss)

IRF1310NSTRR Applications
There are a lot of Infineon Technologies
IRF1310NSTRR applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF1310NSTRR More Descriptions

100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET, 100V, 42A, 36 mOhm, 73.3 nC Qg, D2-Pak
MOSFET N-CH 100V 42A D2PAK

Product Comparison

The three parts on the right have similar specifications to IRF1310NSTRR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Resistance

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Max Operating Temperature

Min Operating Temperature

Supplier Device Package

View Compare
IRF1310NSTRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 160W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

100V

10V

±20V

42A

0.036Ohm

140A

100V

420 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1405ZSPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

-

1

-

230W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

75A Tc

180nC @ 10V

-

10V

±20V

-

-

600A

-

420 mJ

ROHS3 Compliant

Surface Mount

3

4.9MOhm

Single

230W

18 ns

110ns

82 ns

48 ns

75A

4V

20V

55V

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

Lead Free

-

-

-

IRF1310NSTRR vs IRF1405ZSPBF
IRF1310NSTRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Tape & Reel (TR)

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

-

1

-

3.8W Ta 160W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

420 mJ

ROHS3 Compliant

Surface Mount

3

-

Single

3.8W

11 ns

56ns

40 ns

45 ns

42A

-

20V

100V

-

4.826mm

10.668mm

9.65mm

-

No

-

175°C

-55°C

-

IRF1310NSTRR vs IRF1310NSTRRPBF
IRF1010ESTRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

200W Tc

-

-

N-Channel

-

12mOhm @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

60V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

D2PAK

IRF1310NSTRR vs IRF1010ESTRR