Infineon Technologies IRF1405ZSPBF

Name: IRF1405ZSPBF
Brand: Infineon Technologies
SKU: 2854152-IRF1405ZSPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1405ZSPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2854152-IRF1405ZSPBF

Description:: MOSFET N-CH 55V 75A D2PAK

ECAD Model:

Datasheet:: IRF1405Z(S,L)PbF

Specifications

Infineon Technologies IRF1405ZSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1405ZSPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
4.9MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
230W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
230W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.9m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
180nC @ 10V
Rise Time
110ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
82 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
75A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
55V
Pulsed Drain Current-Max (IDM)
600A
Avalanche Energy Rating (Eas)
420 mJ
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF1405ZSPBF Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 420 mJ.The maximum input capacitance of this device is 4780pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 75A.When VGS=55V, and ID flows to VDS at 55VVDS, the drain-source breakdown voltage is 55V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 48 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 600A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 18 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (10V), this device helps reduce its power consumption.

IRF1405ZSPBF Features
the avalanche energy rating (Eas) is 420 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 600A.
a threshold voltage of 4V

IRF1405ZSPBF Applications
There are a lot of Infineon Technologies
IRF1405ZSPBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF1405ZSPBF More Descriptions

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 55V 150A 3-Pin(2 Tab) D2PAK Tube
Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CHANNEL MOSFET, 55V, 75A, D2-PAK; Tran; N CHANNEL MOSFET, 55V, 75A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V

Product Comparison

The three parts on the right have similar specifications to IRF1405ZSPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Termination

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

Terminal Position

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

View Compare
IRF1405ZSPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

e3

Discontinued

1 (Unlimited)

2

EAR99

4.9MOhm

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

230W Tc

Single

ENHANCEMENT MODE

230W

DRAIN

18 ns

N-Channel

SWITCHING

4.9m Ω @ 75A, 10V

4V @ 250μA

4780pF @ 25V

75A Tc

180nC @ 10V

110ns

10V

±20V

82 ns

48 ns

75A

4V

20V

55V

600A

420 mJ

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF1324SPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

HEXFET®

2008

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

1

300W Tc

-

-

300W

-

17 ns

N-Channel

-

1.65mOhm @ 195A, 10V

4V @ 250μA

7590pF @ 24V

195A Tc

240nC @ 10V

190ns

10V

±20V

120 ns

83 ns

340A

4V

20V

24V

-

-

4 V

4.826mm

10.668mm

9.65mm

No SVHC

No

RoHS Compliant

-

D2PAK

SMD/SMT

175°C

-55°C

24V

24V

7.59nF

1.65mOhm

1.65 mΩ

-

-

-

-

-

-

-

IRF1405ZSPBF vs IRF1324SPBF
IRF1104STRL

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

2.4W Ta 170W Tc

-

-

-

-

-

N-Channel

-

9mOhm @ 60A, 10V

4V @ 250μA

2900pF @ 25V

100A Tc

93nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D2PAK

-

-

-

40V

-

-

-

-

-

-

-

-

-

-

-

IRF1405ZSPBF vs IRF1104STRL
IRF1310NSTRR

Infineon Technologies

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

-

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

GULL WING

260

30

R-PSSO-G2

1

3.8W Ta 160W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

36m Ω @ 22A, 10V

4V @ 250μA

1900pF @ 25V

42A Tc

110nC @ 10V

-

10V

±20V

-

-

-

-

-

-

140A

420 mJ

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

100V

-

-

-

-

YES

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

42A

0.036Ohm

100V

IRF1405ZSPBF vs IRF1310NSTRR

Certification

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IRF1405~~(31)~~
IRF140~~(62)~~
IRF14~~(62)~~
IRF1~~(69)~~
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Part Number	Manufacturers	Description	Stock	Price
IRF1405ZSPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 55V 75A D2PAK RoHS: Compliant	0
IRF1405ZSPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 55V, 150A, TO-263-3, Transistor Pol	0
IRF1405ZSPBF DISTI #	Infineon Technologies AG	IRF1405ZSPBF N-channel MOSFET Transistor, 150 A, RoHS: Compliant	0	400 $1.58
IRF1405ZSPBF DISTI #	Infineon Technologies AG	MOSFET 55V 1 N-CH HEXFET 4.9mOhms 120nC RoHS: Compliant	80	1 $2.85 10 $2.42 100 $1.94 250 $1.84 500 $1.69 1000 $1.4 2500 $1.3 5000 $1.22
IRF1405ZSPBF DISTI #	International Rectifier	Power Field-Effect Transistor, 75A I(D), 55V, 0.00 RoHS: Compliant	2450	1 $1.41 25 $1.31 100 $1.26 500 $1.21 1000 $1.15
IRF1405ZSPBF DISTI #	International Rectifier	75 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSF	2	1 $2.997 3 $2.4975
IRF1405ZSPBF DISTI #	International Rectifier	RoHS: Compliant	700
IRF1405ZSPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 55V, 150A, TO-263-3 RoHS: Compliant	38	1 $2.43 10 $1.83 100 $1.47 250 $1.39 500 $1.28

Infineon Technologies IRF1405ZSPBF

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