Infineon Technologies IRF1010ESTRR
- Part Number:
- IRF1010ESTRR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853736-IRF1010ESTRR
- Description:
- MOSFET N-CH 60V 84A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF1010ESTRR
Infineon Technologies IRF1010ESTRR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ESTRR.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2002
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max200W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs12mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds3210pF @ 25V
- Current - Continuous Drain (Id) @ 25°C84A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusNon-RoHS Compliant
IRF1010ESTRR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3210pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF1010ESTRR Features
a 60V drain to source voltage (Vdss)
IRF1010ESTRR Applications
There are a lot of Infineon Technologies
IRF1010ESTRR applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3210pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF1010ESTRR Features
a 60V drain to source voltage (Vdss)
IRF1010ESTRR Applications
There are a lot of Infineon Technologies
IRF1010ESTRR applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF1010ESTRR More Descriptions
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
MOSFET N-CH 60V 84A D2PAK
75 A 60 V 0.012 ohm N-CHANNEL Si POWER MOSFET
MOSFET N-CH 60V 84A D2PAK
75 A 60 V 0.012 ohm N-CHANNEL Si POWER MOSFET
The three parts on the right have similar specifications to IRF1010ESTRR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF1010ESTRRSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)200W TcN-Channel12mOhm @ 50A, 10V4V @ 250μA3210pF @ 25V84A Tc130nC @ 10V60V10V±20VNon-RoHS Compliant------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.4W Ta 170W TcN-Channel9mOhm @ 60A, 10V4V @ 250μA2900pF @ 25V100A Tc93nC @ 10V40V10V±20VNon-RoHS Compliant------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)HEXFET®1998Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 160W TcN-Channel36m Ω @ 22A, 10V4V @ 250μA1900pF @ 25V42A Tc110nC @ 10V100V10V±20VNon-RoHS CompliantYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING42A0.036Ohm140A100V420 mJ
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)HEXFET®2002Obsolete1 (Unlimited)MOSFET (Metal Oxide)180W TcN-Channel11m Ω @ 43A, 10V4V @ 250μA3210pF @ 25V85A Tc120nC @ 10V55V10V±20VNon-RoHS CompliantYESSILICONe32EAR99Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCEFET General Purpose PowerSINGLEGULL WING26030R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING75A0.011Ohm290A55V250 mJ
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