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IRF1324PBF

Infineon Technologies IRF1324PBF

Part Number:
IRF1324PBF
Manufacturer:
Infineon Technologies
Ventron No:
2479393-IRF1324PBF
Description:
MOSFET N-CH 24V 195A TO220AB
ECAD Model:
Datasheet:
IRF1324PBF

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Specifications
Infineon Technologies IRF1324PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1324PBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    300W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Turn On Delay Time
    17 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5m Ω @ 195A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    7590pF @ 24V
  • Current - Continuous Drain (Id) @ 25°C
    195A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    240nC @ 10V
  • Rise Time
    190ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    120 ns
  • Turn-Off Delay Time
    83 ns
  • Continuous Drain Current (ID)
    340A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    24V
  • Dual Supply Voltage
    24V
  • Avalanche Energy Rating (Eas)
    270 mJ
  • Nominal Vgs
    4 V
  • Height
    9.02mm
  • Length
    10.668mm
  • Width
    4.826mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF1324PBF Applications On April 1st, 1999, Siemens Semiconductors became Infineon Technologies. A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics. Infineon is a leading global designer, manufacturer and supplier of a broad range of semiconductors used in various microelectronic applications. Infineon's product portfolio consists of logic products, including digital, mixed-signal, and analog integrated circuits, as well as discrete semiconductor products. The manufacturer of IRF1324PBF is Siemens Semiconductors.

IRF1324PBF Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free

IRF1324PBF Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits


IRF1324PBF More Descriptions
24V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH 24V 353A 3-Pin(3 Tab) TO-220AB - Rail/Tube
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
IRF1324PBF Series 24 V 1.5 mOhm HEXFET N-Channel Power MOSFET - TO-220AB
MOSFET, 24V, 353A, 1.5 MOHM, 160 NC QG,TO-220
MOSFET, N-CH 24V 195A TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:24V; On Resistance Rds(on):1.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:24V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF1324PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Case Connection
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    View Compare
  • IRF1324PBF
    IRF1324PBF
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HEXFET®
    2008
    Active
    1 (Unlimited)
    3
    Through Hole
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    300W Tc
    Single
    ENHANCEMENT MODE
    300W
    17 ns
    N-Channel
    SWITCHING
    1.5m Ω @ 195A, 10V
    4V @ 250μA
    7590pF @ 24V
    195A Tc
    240nC @ 10V
    190ns
    10V
    ±20V
    120 ns
    83 ns
    340A
    4V
    TO-220AB
    20V
    24V
    24V
    270 mJ
    4 V
    9.02mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1310NSTRRPBF
    IRF1310NSTRRPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    Tape & Reel (TR)
    HEXFET®
    2004
    Discontinued
    1 (Unlimited)
    2
    -
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    3.8W Ta 160W Tc
    Single
    ENHANCEMENT MODE
    3.8W
    11 ns
    N-Channel
    SWITCHING
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    56ns
    10V
    ±20V
    40 ns
    45 ns
    42A
    -
    -
    20V
    100V
    -
    420 mJ
    -
    4.826mm
    10.668mm
    9.65mm
    -
    No
    ROHS3 Compliant
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    175°C
    -55°C
    AVALANCHE RATED, HIGH RELIABILITY
    GULL WING
    260
    30
    R-PSSO-G2
    DRAIN
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF1324PBF vs IRF1310NSTRRPBF
  • IRF1104STRL
    IRF1104STRL
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    2.4W Ta 170W Tc
    -
    -
    -
    -
    N-Channel
    -
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    40V
    -
    -
    -
    -
    -
    -
    -
    -
    IRF1324PBF vs IRF1104STRL
  • IRF1010NSTRR
    IRF1010NSTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    1
    180W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    11m Ω @ 43A, 10V
    4V @ 250μA
    3210pF @ 25V
    85A Tc
    120nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    250 mJ
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    -
    -
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    GULL WING
    260
    30
    R-PSSO-G2
    DRAIN
    -
    55V
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    75A
    0.011Ohm
    290A
    55V
    IRF1324PBF vs IRF1010NSTRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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