Infineon Technologies IRF1010ESTRLPBF

Name: IRF1010ESTRLPBF
Brand: Infineon Technologies
SKU: 2849084-IRF1010ESTRLPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF1010ESTRLPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2849084-IRF1010ESTRLPBF

Description:: MOSFET N-CH 60V 84A D2PAK

ECAD Model:

Datasheet:: IRF1010ESTRLPBF

Specifications

Infineon Technologies IRF1010ESTRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF1010ESTRLPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2002
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
12mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
84A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
200W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
170W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
12m Ω @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3210pF @ 25V
Current - Continuous Drain (Id) @ 25°C
84A Tc
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Rise Time
78ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
53 ns
Turn-Off Delay Time
48 ns
Continuous Drain Current (ID)
84A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
75A
Drain to Source Breakdown Voltage
60V
Nominal Vgs
4 V
Height
4.826mm
Length
10.668mm
Width
9.65mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF1010ESTRLPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3210pF @ 25V.This device has a continuous drain current (ID) of [84A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.A device's drain current is its maximum continuous current, and this device's drain current is 75A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 48 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IRF1010ESTRLPBF Features
a continuous drain current (ID) of 84A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 48 ns

IRF1010ESTRLPBF Applications
There are a lot of Infineon Technologies
IRF1010ESTRLPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF1010ESTRLPBF More Descriptions

Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - D2PAK
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 60V 84A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
MOSFET, N-CH, 60V, 84A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Source Voltage Vds:60V; On Resistance
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N-CH, 60V, 84A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 200W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 170

Product Comparison

The three parts on the right have similar specifications to IRF1010ESTRLPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Terminal Position

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

View Compare
IRF1010ESTRLPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

e3

Active

1 (Unlimited)

2

EAR99

12mOhm

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

60V

MOSFET (Metal Oxide)

GULL WING

260

84A

30

R-PSSO-G2

1

200W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

12 ns

N-Channel

SWITCHING

12m Ω @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

78ns

10V

±20V

53 ns

48 ns

84A

20V

75A

60V

4 V

4.826mm

10.668mm

9.65mm

Unknown

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
IRF1405STRR

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Obsolete

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

-

MOSFET (Metal Oxide)

GULL WING

260

-

30

R-PSSO-G2

1

200W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

5.3m Ω @ 101A, 10V

4V @ 250μA

5480pF @ 25V

131A Tc

260nC @ 10V

-

10V

±20V

-

-

-

-

75A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

Matte Tin (Sn) - with Nickel (Ni) barrier

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

55V

0.0053Ohm

680A

55V

590 mJ

-

IRF1010ESTRLPBF vs IRF1405STRR
IRF1010ESTRR

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

200W Tc

-

-

-

-

-

N-Channel

-

12mOhm @ 50A, 10V

4V @ 250μA

3210pF @ 25V

84A Tc

130nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

60V

-

-

-

-

D2PAK

IRF1010ESTRLPBF vs IRF1010ESTRR
IRF1405SPBF

Infineon Technologies

-

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tube

HEXFET®

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

200W Tc

-

-

-

-

-

N-Channel

-

5.3mOhm @ 101A, 10V

4V @ 250μA

5.48pF @ 25V

131A Tc

260nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

55V

-

-

-

-

D2PAK

IRF1010ESTRLPBF vs IRF1405SPBF

Certification

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IRF1010ESTRLPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(2 Tab) D2PAK T/	2400	800 $0.5424 1600 $0.5328
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 60V 84A D2PAK RoHS: Compliant	22618	1 $1.74 10 $1.57 100 $1.2619
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 60V 84A D2PAK RoHS: Compliant	22618	1 $1.74 10 $1.57 100 $1.2619
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 60V 84A D2PAK RoHS: Compliant	22400	800 $0.90388
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(2 Tab) D2PAK T/ RoHS: Compliant	900	1 $2.25 10 $1.15 50 $0.941 100 $0.796 200 $0.701
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 60V 84A 3-Pin(2 Tab) D2PAK T/ RoHS: Compliant	2400	800 $0.755 1600 $0.698 2400 $0.578
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 84A 3-Pin(2 Tab) D2PAK T/R ( RoHS: Compliant	3200	800 $0.6399 1600 $0.5229 3200 $0.4799 4800 $0.4429 8000 $0.4109
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 84A 3-Pin(2 Tab) D2PAK T/R - RoHS: Compliant	0	800 $0.5699 1600 $0.5499 3200 $0.5299 4800 $0.5119 8000 $0.5029
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 60V 84A 3-Pin(2 Tab) D2PAK T/R ( RoHS: Compliant	0	800 $0.5842 1600 $0.56019 2400 $0.55262 4000 $0.53109 8000 $0.52428 20000 $0.51118 40000 $0.49871
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 60V, 84A, TO-263AB, Transistor Pola	344	1 $1.63 10 $1.39 25 $1.28 50 $1.18 100 $1.07 250 $1.01 500 $0.941
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK RoHS: Compliant	0	800 $2.45 1600 $2.401 4000 $2.328 8000 $2.23 20000 $2.083
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	Single N-Channel 60 V 12 mOhm 130 nC HEXFET Power RoHS: Compliant	1600	800 $0.635 1600 $0.615
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 60V 83A 12mOhm 86.6nC RoHS: Compliant	2425	1 $1.63 10 $1.39 100 $1.07 500 $0.941 800 $0.743 2400 $0.659
IRF1010ESTRLPBF DISTI #	International Rectifier	POWER FIELD-EFFECT TRANSISTOR, 75A I(D), 60V, 0.01	155	1 $1.65 19 $1.1 69 $0.825
IRF1010ESTRLPBF DISTI #	International Rectifier	RoHS: Compliant	6000
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 60V, 84A, TO-263AB RoHS: Compliant	409	5 $1.06 25 $0.938 100 $0.816 250 $0.692 500 $0.567
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 60V, 84A, TO-263AB RoHS: Compliant	344	1 $2.12 10 $1.85 100 $1.51
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	1077	800 $1.27 1077 $1.15
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	800	800 $0.9364
IRF1010ESTRLPBF DISTI #	Infineon Technologies AG	TO-220AB RoHS: Compliant	1728	800 $0.7886 1728 $0.736

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Infineon Technologies IRF1010ESTRLPBF

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