IRFP260N Power Mosfet Transistor: Symbol, Features and Working Principle
08 October 2023
Ⅰ. IRFP260N transistor description
Ⅱ. Symbol, footprint and pin connection of IRFP260N
Ⅴ. How does IRFP260N work and how does it drive IRFP260N?
Ⅵ. Absolute maximum ratings of IRFP260N
Ⅷ. How to prevent IRFP260N from overheating?
Ⅸ. How to deal with possible IRFP260N failures?
The IRFP260N is a power MOSFET manufactured by International Rectifier Corporation (now part of Infineon Technologies). It is a power device using N-channel enhancement-type silicon gate MOSFET architecture, which uses advanced processing technology to achieve extremely low on-resistance per silicon surface. This advantage, combined with fast switching speeds and rugged device design, provides extremely efficient and reliable operation. It comes in a TO-247 package for easy integration and is suitable for high power applications.
From the birth of the first transistor in 1947 to the present, the development of transistors has been extraordinary. In this process, the arrival of IRFP260N marks an important milestone. The IRFP260N was born from the desire for powerful, high power, high voltage MOSFETs and is a testament to decades of tireless research and technological advancement.
Replacement and equivalent：
• IRF054
• IRFP260NHR
The IRFP260N, like any MOSFET, is a three-terminal device with a gate (G), drain (D), and source (S). The functions of these pins are as follows.
Pin 1 (Gate): This is the control pin of the MOSFET, used to control the on and off of the MOSFET. By applying a positive voltage to the gate, the MOSFET is turned on, allowing current to flow through it. Generally, the voltage between the gate and source determines the operating state of the MOSFET.
Pin 2 (Drain): This is the high voltage pin of the MOSFET and is used to connect to the load circuit. When the MOSFET turns on, current flows from the drain and through the connected load circuit. The drain pin is usually connected to the supply voltage.
Pin 3 (Source): This is the output pin of the MOSFET and is usually connected to ground. Current flows into the MOSFET from the source and out of the drain. The SOURCE pin is also used to connect to current measurement circuits or other external circuits.
IRFP260N has the following features:
1. Excellent insulation properties
IRFP260N type semiconductor device has excellent insulation performance and can achieve high isolation voltage during operation. This characteristic makes it popular in the field of high-voltage electrical equipment, providing a strong guarantee for the stable operation of the power system.
2. Low on-resistance
The on-resistance of IRFP260N is very low, only about 0.04 ohms. This means that in the switching state, the IRFP260N consumes very little energy and can also reduce power loss.
3. High-speed switching characteristics
IRFP260N is a switching diode with fast switching speed, which can effectively shorten the occupancy time and improve the working efficiency of the circuit. In circuits with high switching frequency, IRFP260N can ensure stable operation of the circuit with low loss and high efficiency performance. At the same time, it has a high reverse voltage capability and performs well when withstanding transient overvoltage impacts, effectively protecting the circuit from voltage fluctuations.
4. Reliability in high temperature environments
IRFP260N remains reliable in high temperature environments. If power electronic equipment is used in harsh environments, the excellent performance of IRFP260N can allow it to run longer.
5. High current withstanding capability
The maximum withstand current of IRFP260N is up to 50 amps, making it widely applicable in high-power electronic equipment. In high-power electronic equipment such as DC-DC converters and high-power amplifiers, IRFP260N has become a common choice due to its high withstand voltage, large flow capacity, and fast switching speed.
In addition, IRFP260N also has many other excellent features. For example, it has excellent linear characteristics, good common-mode noise suppression capability, low noise, etc. These characteristics make it widely used in many fields.
IRFP260N affects the charge distribution in the channel by controlling the electric field between the gate and source, thereby controlling the conductivity of the channel. When a forward voltage is applied to the gate, that is, when the gate voltage is higher than the source voltage, the electric field will attract the charges in the channel, narrowing the channel and reducing the conduction current. On the contrary, when a negative voltage is applied to the gate, that is, when the gate voltage is lower than the source voltage, the electric field will repel the charges in the channel, making the channel wider and the conduction current increasing.
IRFP260N usually requires an appropriate driver circuit to control its on and off. It can use appropriate driver circuitry to provide sufficient gate voltage (usually above 10V) to ensure full turn-on. The drive circuit usually includes a gate driver and an appropriate power supply circuit to ensure stable operation.
When using an optocoupler isolation driver to drive the IRFP260N, we need to receive the control signal from the input end of the optocoupler isolation driver, and then drive the gate of the IRFP260N through the isolation optocoupler. This driving method can effectively avoid ground loops, thereby reducing EMI interference and improving system reliability. At the same time, the optocoupler isolation driver can also withstand high voltage and high current, so it is very suitable for driving high-power MOSFET transistors such as IRFP260N.
In addition to optocoupler isolation drivers, there are other types of drivers that can be used to drive IRFP260N, such as IR series drivers, EXC series drivers, etc. These drivers typically have higher current drive capabilities and are suitable for driving high power transistors.
Absolute Maximum Ratings refer to conditions that cannot be exceeded. When a voltage exceeding the absolute maximum ratings is applied or used outside the temperature environment specified by the absolute maximum ratings, the characteristics of the IRFP260N may be degraded or damaged. As shown in the figure below, we should use IRFP260N within a reasonable range.
• Switching power supply: IRFP260N can be used in switching power supply design, especially high-efficiency switching mode power supply. It can switch quickly to achieve high-frequency power conversion while reducing energy loss.
• Lighting applications: In situations where high brightness and high power lighting are required, the IRFP260N can be used to drive LEDs or other lighting devices to achieve efficient lighting systems.
• Welding equipment: IRFP260N can be used in high-power arc welding equipment to provide sufficient power and control to maintain the stability of the welding process.
• Voltage Regulator: In voltage regulation circuits, especially for high current and high voltage applications, the IRFP260N can be used as a pass transistor in series with the voltage regulator circuit to handle higher currents.
• DC-DC converter: IRFP260N can be used in DC-DC converter circuits. Its low on-resistance helps reduce power losses in these applications.
• Power amplifier: IRFP260N can be used to build high-power audio amplifiers such as sound systems or audio equipment. It's capable of delivering enough power to drive large speakers, making music and sound effects clearer and more powerful.
• Electric vehicles and motor control: IRFP260N can be used in electric vehicles and motor control systems to control the speed and power of the motor. This is essential in fields such as electric vehicles and robots.
• Control current and voltage to ensure that the rated parameters of the IRFP260N are not exceeded.
• Ensure appropriate heat sinks and fans (if required) to effectively cool the IRFP260N.
• Use appropriate protection circuits, such as over-temperature protection and over-current protection, to prevent IRFP260N from overheating damage.
Short circuit fault: If there is a short circuit fault in IRFP260N, we should turn off the power immediately and check the circuit. This may be caused by circuit design errors, component failure or improper operation. We need to carefully check and repair the fault point.
Overheating fault: If the IRFP260N has an overheating fault, it may be caused by poor heat dissipation or improper circuit design. We need to check the installation and working environment of the radiator and ensure there is good heat conduction between the radiator and IRFP260N.
Open circuit fault: If the IRFP260N has an open circuit fault, we should check whether its gate connection is good and whether the driver is working properly. If the fault cannot be eliminated, we may need to replace the IRFP260N.
Other faults: If the IRFP260N has noise, flickering or other faults, we need to deal with them according to the specific situation. This may be caused by power fluctuations, electromagnetic interference or other component failures, and we need to carefully check and eliminate the fault point.
Frequently Asked Questions
1. What is IRFP260N?
The IRFP260N is a power MOSFET transistor known for its high voltage and current ratings. It is commonly used in power supplies and motor control due to its ability to handle high power levels efficiently.
2. How many watts is a IRFP260N Mosfet?
And also for applications with low on-resistance requirements. IRFP260N manufactured in TO-247AC package that is universally accepted for all commercial-industrial applications. Also at power dissipation levels to approximately 50 watts.
3. What are some common applications for the IRFP260N?
Common applications for the IRFP260N include power amplifiers, motor control circuits, DC-DC converters, uninterruptible power supplies (UPS), and various other high-power switching applications.
4. What precautions should be taken when using the IRFP260N in circuits?
When using the IRFP260N, it's essential to ensure that the gate-source voltage and current are within specified limits to prevent damage. Additionally, proper heatsinking and thermal management should be employed to maintain safe operating temperatures.
