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IRF100B202

Infineon Technologies IRF100B202

Part Number:
IRF100B202
Manufacturer:
Infineon Technologies
Ventron No:
2479333-IRF100B202
Description:
MOSFET N-CH 100V 97A TO-220AB
ECAD Model:
Datasheet:
IRF100B202

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Specifications
Infineon Technologies IRF100B202 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF100B202.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®, StrongIRFET™
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max
    221W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    8.6m Ω @ 58A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 150μA
  • Input Capacitance (Ciss) (Max) @ Vds
    4476pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    97A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    116nC @ 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    97A
  • RoHS Status
    ROHS3 Compliant
Description
IRF100B202 Description
The Infineon IRF100B202 Transistor is a 100V single N-channel HEXFET? Power MOSFET with extraordinarily low on-resistance per silicon area and quick switching performance due to the use of Trench MOSFET technology.

IRF100B202 Features
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant, Halogen-Free

IRF100B202 Applications
Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters  Brushed Motor drive applications BLDC Motor drive applications Battery-powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications 
IRF100B202 More Descriptions
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
TUBE / MOSFET, 100V, 97A, 8.6 mOhm, 77nC, TO-220
Trans MOSFET N-CH 100V 97A 3-Pin TO-220AB Tube - Rail/Tube
IRF100B202 Single N-Channel 100 V 8.6 mOhm HEXFET Power MOSFET - TO-220-3
MOSFET, N-CH, 100V, 97A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 97A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant, Halogen-Free; StrongIRFET
Product Comparison
The three parts on the right have similar specifications to IRF100B202.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Number of Pins
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Terminal Form
    JESD-30 Code
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Supplier Device Package
    Surface Mount
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    DS Breakdown Voltage-Min
    View Compare
  • IRF100B202
    IRF100B202
    Infineon Technologies
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    HEXFET®, StrongIRFET™
    2013
    Active
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    221W Tc
    N-Channel
    8.6m Ω @ 58A, 10V
    4V @ 150μA
    4476pF @ 50V
    97A Tc
    116nC @ 10V
    100V
    10V
    ±20V
    97A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF1405ZSPBF
    IRF1405ZSPBF
    Infineon Technologies
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Discontinued
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    260
    30
    230W Tc
    N-Channel
    4.9m Ω @ 75A, 10V
    4V @ 250μA
    4780pF @ 25V
    75A Tc
    180nC @ 10V
    -
    10V
    ±20V
    75A
    ROHS3 Compliant
    3
    SILICON
    e3
    2
    4.9MOhm
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
    FET General Purpose Power
    GULL WING
    R-PSSO-G2
    1
    Single
    ENHANCEMENT MODE
    230W
    DRAIN
    18 ns
    SWITCHING
    110ns
    82 ns
    48 ns
    4V
    20V
    55V
    600A
    420 mJ
    4 V
    4.826mm
    10.668mm
    9.65mm
    No SVHC
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    IRF100B202 vs IRF1405ZSPBF
  • IRF1104STRL
    IRF1104STRL
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    2.4W Ta 170W Tc
    N-Channel
    9mOhm @ 60A, 10V
    4V @ 250μA
    2900pF @ 25V
    100A Tc
    93nC @ 10V
    40V
    10V
    ±20V
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    -
    -
    -
    -
    -
    -
    -
    IRF100B202 vs IRF1104STRL
  • IRF1310NSTRR
    IRF1310NSTRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    1998
    Obsolete
    1 (Unlimited)
    EAR99
    MOSFET (Metal Oxide)
    260
    30
    3.8W Ta 160W Tc
    N-Channel
    36m Ω @ 22A, 10V
    4V @ 250μA
    1900pF @ 25V
    42A Tc
    110nC @ 10V
    100V
    10V
    ±20V
    -
    Non-RoHS Compliant
    -
    SILICON
    e3
    2
    -
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    GULL WING
    R-PSSO-G2
    1
    -
    ENHANCEMENT MODE
    -
    DRAIN
    -
    SWITCHING
    -
    -
    -
    -
    -
    -
    140A
    420 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    42A
    0.036Ohm
    100V
    IRF100B202 vs IRF1310NSTRR
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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