Infineon Technologies IPB180N08S402ATMA1

IPB180N08S402ATMA1 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 640 mJ.The maximum input capacitance of this device is 11550pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 180A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 50 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 80V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (10V), this device helps reduce its power consumption.

IPB180N08S402ATMA1 Features
the avalanche energy rating (Eas) is 640 mJ
a continuous drain current (ID) of 180A
the turn-off delay time is 50 ns


IPB180N08S402ATMA1 Applications
There are a lot of Infineon Technologies
IPB180N08S402ATMA1 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,