Infineon Technologies IPB11N03LA
- Part Number:
- IPB11N03LA
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586948-IPB11N03LA
- Description:
- MOSFET N-CH 25V 30A D2PAK
- ECAD Model:
-
- Datasheet:
- IPB11N03LA G
Infineon Technologies IPB11N03LA technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB11N03LA.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryFET General Purpose Power
- Voltage - Rated DC25V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Current Rating30A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max52W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs11.2m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id2V @ 20μA
- Input Capacitance (Ciss) (Max) @ Vds1358pF @ 15V
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Gate Charge (Qg) (Max) @ Vgs11nC @ 5V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)30A
- Drain-source On Resistance-Max0.0112Ohm
- Pulsed Drain Current-Max (IDM)210A
- Avalanche Energy Rating (Eas)80 mJ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IPB11N03LA Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.A device's maximum input capacitance is 1358pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 210A, which is also its maximum rating peak drainage current.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB11N03LA Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 210A.
IPB11N03LA Applications
There are a lot of Infineon Technologies
IPB11N03LA applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 80 mJ.A device's maximum input capacitance is 1358pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 30A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 210A, which is also its maximum rating peak drainage current.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IPB11N03LA Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 210A.
IPB11N03LA Applications
There are a lot of Infineon Technologies
IPB11N03LA applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IPB11N03LA More Descriptions
MOSFET N-CH 25V 30A D2PAK
OEMs, CMs ONLY (NO BROKERS)
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IPB11N03LA.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeFactory Lead TimeNumber of PinsWeightReach Compliance CodeNumber of ChannelsElement ConfigurationPower DissipationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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IPB11N03LASurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e3yesDiscontinued1 (Unlimited)2EAR99MATTE TINLOGIC LEVEL COMPATIBLEFET General Purpose Power25VMOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIED30ANOT SPECIFIED4R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE52W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING11.2m Ω @ 30A, 10V2V @ 20μA1358pF @ 15V30A Tc11nC @ 5V4.5V 10V±20V30A0.0112Ohm210A80 mJNon-RoHS CompliantContains Lead------------------------- -
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJCut Tape (CT)OptiMOS™2013e3-Active1 (Unlimited)2EAR99Tin (Sn)---MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2-1-300W TcENHANCEMENT MODEDRAINN-Channel-11.7m Ω @ 84A, 10V4V @ 270μA6650pF @ 100V84A Tc87nC @ 10V10V±20V84A---ROHS3 CompliantContains Lead13 Weeks31.946308gnot_compliant1Single300W13 nsHalogen Free10ns8 ns24 ns3V20V200V200V175°C4.82mmNo SVHC-----
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-Surface MountTO-263-7, D2Pak (6 Leads Tab)--55°C~175°C TJTape & Reel (TR)OptiMOS™---Obsolete1 (Unlimited)------MOSFET (Metal Oxide)----------250W Tc--N-Channel-1.7mOhm @ 100A, 10V4V @ 200μA21.9pF @ 25V180A Tc270nC @ 10V10V±20V----ROHS3 Compliant--------------------PG-TO263-7-360V---
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006--Discontinued1 (Unlimited)2EAR99----MOSFET (Metal Oxide)SINGLEGULL WING----R-PSSO-G2-1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-Channel-4.7m Ω @ 80A, 10V4V @ 250μA5110pF @ 25V100A Tc170nC @ 10V10V±20V-0.0047Ohm400A810 mJROHS3 Compliant---------------------55VYES100A55V
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