Infineon Technologies IPB100N08S207ATMA1
- Part Number:
- IPB100N08S207ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071568-IPB100N08S207ATMA1
- Description:
- MOSFET N-CH 75V 100A TO263-3
- Datasheet:
- IPB100N08S207ATMA1
Infineon Technologies IPB100N08S207ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB100N08S207ATMA1.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2006
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time26 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs6.8m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds4700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs200nC @ 10V
- Rise Time51ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)30 ns
- Turn-Off Delay Time61 ns
- Continuous Drain Current (ID)100A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage75V
- Drain-source On Resistance-Max0.0068Ohm
- Pulsed Drain Current-Max (IDM)400A
- Avalanche Energy Rating (Eas)810 mJ
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPB100N08S207ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 810 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 61 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 75V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB100N08S207ATMA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 61 ns
based on its rated peak drain current 400A.
IPB100N08S207ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N08S207ATMA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 810 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 4700pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 61 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 75V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB100N08S207ATMA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
the turn-off delay time is 61 ns
based on its rated peak drain current 400A.
IPB100N08S207ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N08S207ATMA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPB100N08S207ATMA1 More Descriptions
75V, N-Ch, 6.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHSInfineon SCT
Trans MOSFET N-CH 75V 100A Automotive AEC-Q101 3-Pin(2 Tab) D2PAK T/R
Summary of Features: N-channel Logic Level - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 75V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
Trans MOSFET N-CH 75V 100A Automotive AEC-Q101 3-Pin(2 Tab) D2PAK T/R
Summary of Features: N-channel Logic Level - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 75V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
The three parts on the right have similar specifications to IPB100N08S207ATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeWeightNumber of ChannelsElement ConfigurationPower DissipationThreshold VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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IPB100N08S207ATMA114 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006e3Not For New Designs1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAIN26 nsN-Channel6.8m Ω @ 80A, 10V4V @ 250μAHalogen Free4700pF @ 25V100A Tc200nC @ 10V51ns10V±20V30 ns61 ns100A20V75V0.0068Ohm400A810 mJROHS3 CompliantContains Lead---------------
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13 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJCut Tape (CT)OptiMOS™2013e3Active1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21-300W TcENHANCEMENT MODEDRAIN13 nsN-Channel11.7m Ω @ 84A, 10V4V @ 270μAHalogen Free6650pF @ 100V84A Tc87nC @ 10V10ns10V±20V8 ns24 ns84A20V200V---ROHS3 CompliantContains Lead1.946308g1Single300W3V200V175°C4.82mmNo SVHC-----
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--Surface MountTO-263-7, D2Pak (6 Leads Tab)---55°C~175°C TJTape & Reel (TR)OptiMOS™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--------250W Tc---N-Channel1.7mOhm @ 100A, 10V4V @ 200μA-21.9pF @ 25V180A Tc270nC @ 10V-10V±20V--------ROHS3 Compliant----------PG-TO263-7-360V---
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006-Discontinued1 (Unlimited)2EAR99-MOSFET (Metal Oxide)SINGLEGULL WING---R-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAIN-N-Channel4.7m Ω @ 80A, 10V4V @ 250μA-5110pF @ 25V100A Tc170nC @ 10V-10V±20V-----0.0047Ohm400A810 mJROHS3 Compliant-----------55VYES100A55V
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