IPB100N10S3-05

Infineon Technologies IPB100N10S3-05

Part Number:
IPB100N10S3-05
Manufacturer:
Infineon Technologies
Ventron No:
3071099-IPB100N10S3-05
Description:
MOSFET N-CH 100V 100A TO263-3
ECAD Model:
Datasheet:
IPB100N10S3-05

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Specifications
Infineon Technologies IPB100N10S3-05 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB100N10S3-05.
  • Package / Case
    PG-TO263-3
  • Packaging
    Tape & Reel (TR)
  • RoHS Status
    RoHS Compliant
Description
IPB100N10S3-05 Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPB100N10S3-05 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPB100N10S3-05. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
Product Comparison
The three parts on the right have similar specifications to IPB100N10S3-05.
  • Image
    Part Number
    Manufacturer
    Package / Case
    Packaging
    RoHS Status
    Factory Lead Time
    Mount
    Mounting Type
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Lead Free
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Surface Mount
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    View Compare
  • IPB100N10S3-05
    IPB100N10S3-05
    PG-TO263-3
    Tape & Reel (TR)
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB100N08S207ATMA1
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Tape & Reel (TR)
    ROHS3 Compliant
    14 Weeks
    Surface Mount
    Surface Mount
    3
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2006
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    DRAIN
    26 ns
    N-Channel
    6.8m Ω @ 80A, 10V
    4V @ 250μA
    Halogen Free
    4700pF @ 25V
    100A Tc
    200nC @ 10V
    51ns
    10V
    ±20V
    30 ns
    61 ns
    100A
    20V
    75V
    0.0068Ohm
    400A
    810 mJ
    Contains Lead
    -
    -
    -
    -
    -
  • IPB180N06S4H1ATMA1
    TO-263-7, D2Pak (6 Leads Tab)
    Tape & Reel (TR)
    ROHS3 Compliant
    -
    -
    Surface Mount
    -
    -
    -55°C~175°C TJ
    OptiMOS™
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    250W Tc
    -
    -
    -
    N-Channel
    1.7mOhm @ 100A, 10V
    4V @ 200μA
    -
    21.9pF @ 25V
    180A Tc
    270nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PG-TO263-7-3
    60V
    -
    -
    -
  • IPB100N06S205ATMA1
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    Tape & Reel (TR)
    ROHS3 Compliant
    -
    -
    Surface Mount
    -
    SILICON
    -55°C~175°C TJ
    OptiMOS™
    2006
    -
    Discontinued
    1 (Unlimited)
    2
    EAR99
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    -
    -
    -
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    DRAIN
    -
    N-Channel
    4.7m Ω @ 80A, 10V
    4V @ 250μA
    -
    5110pF @ 25V
    100A Tc
    170nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    0.0047Ohm
    400A
    810 mJ
    -
    -
    55V
    YES
    100A
    55V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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