Infineon Technologies IPB136N08N3 G
- Part Number:
- IPB136N08N3 G
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854137-IPB136N08N3 G
- Description:
- MOSFET N-CH 80V 45A TO263-3
- ECAD Model:
-
- Datasheet:
- IPx136,139N08N3 G
Infineon Technologies IPB136N08N3 G technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB136N08N3 G.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2011
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max79W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs13.6m Ω @ 45A, 10V
- Vgs(th) (Max) @ Id3.5V @ 33μA
- Input Capacitance (Ciss) (Max) @ Vds1730pF @ 40V
- Current - Continuous Drain (Id) @ 25°C45A Tc
- Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Drain Current-Max (Abs) (ID)45A
- Drain-source On Resistance-Max0.0136Ohm
- Pulsed Drain Current-Max (IDM)180A
- DS Breakdown Voltage-Min80V
- Avalanche Energy Rating (Eas)50 mJ
- RoHS StatusRoHS Compliant
IPB136N08N3 G Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1730pF @ 40V.A device's drain current is its maximum continuous current, and this device's drain current is 45A.A maximum pulsed drain current of 180A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80V.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (6V 10V).
IPB136N08N3 G Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 180A.
a 80V drain to source voltage (Vdss)
IPB136N08N3 G Applications
There are a lot of Infineon Technologies
IPB136N08N3 G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 50 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1730pF @ 40V.A device's drain current is its maximum continuous current, and this device's drain current is 45A.A maximum pulsed drain current of 180A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 80V.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (6V 10V).
IPB136N08N3 G Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 180A.
a 80V drain to source voltage (Vdss)
IPB136N08N3 G Applications
There are a lot of Infineon Technologies
IPB136N08N3 G applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
IPB136N08N3 G More Descriptions
MOSFET, N CH, 45A, 80V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Dr
IGBT Transistors MOSFET N-Ch 80V 45A D2PAK-2 OptiMOS 3
Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
MOSFET, N CH, 45A, 80V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 79W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 45A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
IGBT Transistors MOSFET N-Ch 80V 45A D2PAK-2 OptiMOS 3
Power Field-Effect Transistor, 45A I(D), 80V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
MOSFET, N CH, 45A, 80V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0115ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 79W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 45A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
The three parts on the right have similar specifications to IPB136N08N3 G.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusFactory Lead TimeMountNumber of PinsPower DissipationTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageLead FreeWeightNumber of ChannelsElement ConfigurationThreshold VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCView Compare
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IPB136N08N3 GSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3yesObsolete1 (Unlimited)2EAR99MATTE TINFET General Purpose PowerMOSFET (Metal Oxide)SINGLEGULL WING260compliant404R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING13.6m Ω @ 45A, 10V3.5V @ 33μA1730pF @ 40V45A Tc25nC @ 10V80V6V 10V±20V45A0.0136Ohm180A80V50 mJRoHS Compliant---------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2008e3-Not For New Designs1 (Unlimited)2EAR99Tin (Sn)-MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED-R-PSSO-G2-1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-Channel-4.8m Ω @ 100A, 10V4V @ 240μA11570pF @ 25V100A Tc176nC @ 10V-10V±20V-0.0048Ohm400A--ROHS3 Compliant14 WeeksSurface Mount3300W34 nsHalogen Free17ns20 ns60 ns100A20V100VContains Lead--------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJCut Tape (CT)OptiMOS™2013e3-Active1 (Unlimited)2EAR99Tin (Sn)-MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIED-R-PSSO-G2-1-300W TcENHANCEMENT MODEDRAINN-Channel-11.7m Ω @ 84A, 10V4V @ 270μA6650pF @ 100V84A Tc87nC @ 10V-10V±20V-----ROHS3 Compliant13 WeeksSurface Mount3300W13 nsHalogen Free10ns8 ns24 ns84A20V200VContains Lead1.946308g1Single3V200V175°C4.82mmNo SVHC
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABYESSILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2006--Discontinued1 (Unlimited)2EAR99--MOSFET (Metal Oxide)SINGLEGULL WING----R-PSSO-G2-1SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODEDRAINN-Channel-4.7m Ω @ 80A, 10V4V @ 250μA5110pF @ 25V100A Tc170nC @ 10V55V10V±20V100A0.0047Ohm400A55V810 mJROHS3 Compliant---------------------
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