Infineon Technologies IPB100N06S3-03
- Part Number:
- IPB100N06S3-03
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071693-IPB100N06S3-03
- Description:
- MOSFET N-CH 55V 100A D2PAK
- Datasheet:
- IPB(I,P)100N06S3-03
Infineon Technologies IPB100N06S3-03 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB100N06S3-03.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Transistor Element MaterialSILICON
- Published2007
- SeriesOptiMOS™
- PackagingTape & Reel (TR)
- Operating Temperature-55°C~175°C TJ
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC55V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating100A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count4
- JESD-30 CodeR-PSSO-G2
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3m Ω @ 80A, 10V
- Vgs(th) (Max) @ Id4V @ 230μA
- Input Capacitance (Ciss) (Max) @ Vds21620pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs480nC @ 10V
- Rise Time67ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)60 ns
- Turn-Off Delay Time77 ns
- Continuous Drain Current (ID)100A
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.003Ohm
- Drain to Source Breakdown Voltage55V
- Pulsed Drain Current-Max (IDM)400A
- Avalanche Energy Rating (Eas)2390 mJ
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IPB100N06S3-03 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2390 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 21620pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 77 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB100N06S3-03 Features
the avalanche energy rating (Eas) is 2390 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 400A.
IPB100N06S3-03 Applications
There are a lot of Infineon Technologies
IPB100N06S3-03 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 2390 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 21620pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 77 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPB100N06S3-03 Features
the avalanche energy rating (Eas) is 2390 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 400A.
IPB100N06S3-03 Applications
There are a lot of Infineon Technologies
IPB100N06S3-03 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IPB100N06S3-03 More Descriptions
MOSFET N-CH 55V 100A D2PAK
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
OEMs, CMs ONLY (NO BROKERS)
new, original packaged
Contact for details
The three parts on the right have similar specifications to IPB100N06S3-03.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseTransistor Element MaterialPublishedSeriesPackagingOperating TemperatureJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)RoHS StatusLead FreeFactory Lead TimeNumber of PinsWeightReach Compliance CodeNumber of ChannelsTurn On Delay TimeHalogen FreeThreshold VoltageMax Dual Supply VoltageMax Junction Temperature (Tj)HeightREACH SVHCSurface MountTerminal PositionConfigurationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinPbfree CodeTransistor ApplicationView Compare
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IPB100N06S3-03Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON2007OptiMOS™Tape & Reel (TR)-55°C~175°C TJe3Obsolete1 (Unlimited)2EAR99MATTE TINAVALANCHE RATEDFET General Purpose Power55VMOSFET (Metal Oxide)GULL WING260100A404R-PSSO-G2Not Qualified1300W TcSingleENHANCEMENT MODE300WDRAINN-Channel3m Ω @ 80A, 10V4V @ 230μA21620pF @ 25V100A Tc480nC @ 10V67ns10V±20V60 ns77 ns100A20V0.003Ohm55V400A2390 mJRoHS CompliantLead Free---------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON2013OptiMOS™Cut Tape (CT)-55°C~175°C TJe3Active1 (Unlimited)2EAR99Tin (Sn)---MOSFET (Metal Oxide)GULL WINGNOT SPECIFIED-NOT SPECIFIED-R-PSSO-G2-1300W TcSingleENHANCEMENT MODE300WDRAINN-Channel11.7m Ω @ 84A, 10V4V @ 270μA6650pF @ 100V84A Tc87nC @ 10V10ns10V±20V8 ns24 ns84A20V-200V--ROHS3 CompliantContains Lead13 Weeks31.946308gnot_compliant113 nsHalogen Free3V200V175°C4.82mmNo SVHC--------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON2006OptiMOS™Tape & Reel (TR)-55°C~175°C TJ-Discontinued1 (Unlimited)2EAR99----MOSFET (Metal Oxide)GULL WING----R-PSSO-G2-1300W Tc-ENHANCEMENT MODE-DRAINN-Channel4.7m Ω @ 80A, 10V4V @ 250μA5110pF @ 25V100A Tc170nC @ 10V-10V±20V----0.0047Ohm-400A810 mJROHS3 Compliant-------------YESSINGLESINGLE WITH BUILT-IN DIODE55V100A55V--
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABSILICON2011OptiMOS™Tape & Reel (TR)-55°C~175°C TJe3Obsolete1 (Unlimited)2EAR99MATTE TIN-FET General Purpose Power-MOSFET (Metal Oxide)GULL WING260-404R-PSSO-G2Not Qualified179W Tc-ENHANCEMENT MODE-DRAINN-Channel13.6m Ω @ 45A, 10V3.5V @ 33μA1730pF @ 40V45A Tc25nC @ 10V-6V 10V±20V----0.0136Ohm-180A50 mJRoHS Compliant----compliant--------YESSINGLESINGLE WITH BUILT-IN DIODE80V45A80VyesSWITCHING
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