Infineon Technologies IPB117N20NFDATMA1
- Part Number:
- IPB117N20NFDATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3070371-IPB117N20NFDATMA1
- Description:
- MOSFET N-CH 200V 84A D2PAK
- ECAD Model:
-
- Datasheet:
- IPB117N20NFDATMA1
Infineon Technologies IPB117N20NFDATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB117N20NFDATMA1.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.946308g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingCut Tape (CT)
- SeriesOptiMOS™
- Published2013
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max300W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- Turn On Delay Time13 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs11.7m Ω @ 84A, 10V
- Vgs(th) (Max) @ Id4V @ 270μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds6650pF @ 100V
- Current - Continuous Drain (Id) @ 25°C84A Tc
- Gate Charge (Qg) (Max) @ Vgs87nC @ 10V
- Rise Time10ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)8 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)84A
- Threshold Voltage3V
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage200V
- Drain to Source Breakdown Voltage200V
- Max Junction Temperature (Tj)175°C
- Height4.82mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPB117N20NFDATMA1 Description
IPB117N20NFDATMA1 is a 200V OptiMOSTMFDPower-Transistor. The IPB117N20NFDATMA1 is the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC-AC inverter. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IPB117N20NFDATMA1 is in the TO-263-3 package with 300W power dissipation.
IPB117N20NFDATMA1 Features
200V OptiMOS? FD power-transistor
N-channel, normal level
Fast diode(FD) with reduced Qrr
Optimized for hard commutation ruggedness
Very low on-resistance RDS(on)
175°C operating temperature
Qualified according to JEDEC for a target application
IPB117N20NFDATMA1 Applications
Telecom
Class D audio amplifier
Motor control for 48-110V systems
Industrial power supplies
DC-AC inverter
IPB117N20NFDATMA1 is a 200V OptiMOSTMFDPower-Transistor. The IPB117N20NFDATMA1 is the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC-AC inverter. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor IPB117N20NFDATMA1 is in the TO-263-3 package with 300W power dissipation.
IPB117N20NFDATMA1 Features
200V OptiMOS? FD power-transistor
N-channel, normal level
Fast diode(FD) with reduced Qrr
Optimized for hard commutation ruggedness
Very low on-resistance RDS(on)
175°C operating temperature
Qualified according to JEDEC for a target application
IPB117N20NFDATMA1 Applications
Telecom
Class D audio amplifier
Motor control for 48-110V systems
Industrial power supplies
DC-AC inverter
IPB117N20NFDATMA1 More Descriptions
Single N-Channel 200 V 11.7 mOhm 65 nC OptiMOS Power Mosfet - D2PAK-3
Trans MOSFET N-CH 200V 84A 3-Pin(2 Tab) D2PAK T/R
Mosfet, N-Ch, 200V, 84A, To-263-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:84A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB117N20NFDATMA1
Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
Trans MOSFET N-CH 200V 84A 3-Pin(2 Tab) D2PAK T/R
Mosfet, N-Ch, 200V, 84A, To-263-3; Channel Type:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:84A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IPB117N20NFDATMA1
Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
New OptiMOS Fast Diode (FD), Infineons latest generation of power MOSFETs in 200V, 250V and 300V is optimized for body diode hard commutation. The new devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter. | Summary of Features: Improved hard commutation ruggedness; Optimized hard switching behavior; Industrys lowest R ds(on), Q g and Q rr; RoHS compliant - halogen free | Benefits: Highest system reliability; System cost reduction; Highest efficiency and power density; Easy-to-design products | Target Applications: Telecom; Class D audio amplifier; Motor control for 48-110V systems; Industrial power supplies; DC-AC inverter
The three parts on the right have similar specifications to IPB117N20NFDATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Max Dual Supply VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCRoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Surface MountPbfree CodeSubcategoryTerminal PositionPin CountQualification StatusConfigurationTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IPB117N20NFDATMA113 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB31.946308gSILICON-55°C~175°C TJCut Tape (CT)OptiMOS™2013e3Active1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G211300W TcSingleENHANCEMENT MODE300WDRAIN13 nsN-Channel11.7m Ω @ 84A, 10V4V @ 270μAHalogen Free6650pF @ 100V84A Tc87nC @ 10V10ns10V±20V8 ns24 ns84A3V20V200V200V175°C4.82mmNo SVHCROHS3 CompliantContains Lead---------------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)OptiMOS™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------214W Tc-----N-Channel4.1mOhm @ 80A, 10V4V @ 150μA-14.23pF @ 25V100A Tc314nC @ 10V-10V±20V----------ROHS3 Compliant-PG-TO263-3-255V-------------
-
--Surface MountTO-263-7, D2Pak (6 Leads Tab)----55°C~175°C TJTape & Reel (TR)OptiMOS™--Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------250W Tc-----N-Channel1.7mOhm @ 100A, 10V4V @ 200μA-21.9pF @ 25V180A Tc270nC @ 10V-10V±20V----------ROHS3 Compliant-PG-TO263-7-360V-------------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TINMOSFET (Metal Oxide)GULL WING260compliant40R-PSSO-G21-79W Tc-ENHANCEMENT MODE-DRAIN-N-Channel13.6m Ω @ 45A, 10V3.5V @ 33μA-1730pF @ 40V45A Tc25nC @ 10V-6V 10V±20V----------RoHS Compliant--80VYESyesFET General Purpose PowerSINGLE4Not QualifiedSINGLE WITH BUILT-IN DIODESWITCHING45A0.0136Ohm180A80V50 mJ
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