Infineon Technologies IPB180N06S4H1ATMA1
- Part Number:
- IPB180N06S4H1ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2854277-IPB180N06S4H1ATMA1
- Description:
- MOSFET N-CH 60V 180A TO263-7
- ECAD Model:
-
- Datasheet:
- IPB180N06S4H1ATMA1
Infineon Technologies IPB180N06S4H1ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB180N06S4H1ATMA1.
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab)
- Supplier Device PackagePG-TO263-7-3
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max250W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.7mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 200μA
- Input Capacitance (Ciss) (Max) @ Vds21.9pF @ 25V
- Current - Continuous Drain (Id) @ 25°C180A Tc
- Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPB180N06S4H1ATMA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 21.9pF @ 25V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPB180N06S4H1ATMA1 Features
a 60V drain to source voltage (Vdss)
IPB180N06S4H1ATMA1 Applications
There are a lot of Rochester Electronics, LLC
IPB180N06S4H1ATMA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 21.9pF @ 25V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPB180N06S4H1ATMA1 Features
a 60V drain to source voltage (Vdss)
IPB180N06S4H1ATMA1 Applications
There are a lot of Rochester Electronics, LLC
IPB180N06S4H1ATMA1 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
The three parts on the right have similar specifications to IPB180N06S4H1ATMA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimeMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModeCase ConnectionTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Lead FreeSurface MountPbfree CodeSubcategoryPin CountQualification StatusTransistor ApplicationDrain Current-Max (Abs) (ID)DS Breakdown Voltage-MinView Compare
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IPB180N06S4H1ATMA1Surface MountTO-263-7, D2Pak (6 Leads Tab)PG-TO263-7-3-55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)250W TcN-Channel1.7mOhm @ 100A, 10V4V @ 200μA21.9pF @ 25V180A Tc270nC @ 10V60V10V±20VROHS3 Compliant---------------------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABPG-TO263-3-2-55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)214W TcN-Channel4.1mOhm @ 80A, 10V4V @ 150μA14.23pF @ 25V100A Tc314nC @ 10V55V10V±20VROHS3 Compliant---------------------------------------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™Not For New Designs1 (Unlimited)MOSFET (Metal Oxide)300W TcN-Channel6.8m Ω @ 80A, 10V4V @ 250μA4700pF @ 25V100A Tc200nC @ 10V-10V±20VROHS3 Compliant14 WeeksSurface Mount3SILICON2006e32EAR99Tin (Sn)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN26 nsHalogen Free51ns30 ns61 ns100A20V75V0.0068Ohm400A810 mJContains Lead--------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)79W TcN-Channel13.6m Ω @ 45A, 10V3.5V @ 33μA1730pF @ 40V45A Tc25nC @ 10V80V6V 10V±20VRoHS Compliant---SILICON2011e32EAR99MATTE TINSINGLEGULL WING260compliant40R-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAIN--------0.0136Ohm180A50 mJ-YESyesFET General Purpose Power4Not QualifiedSWITCHING45A80V
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