IPB100N10S305ATMA1

Infineon Technologies IPB100N10S305ATMA1

Part Number:
IPB100N10S305ATMA1
Manufacturer:
Infineon Technologies
Ventron No:
3586595-IPB100N10S305ATMA1
Description:
MOSFET N-CH 100V 100A TO263-3
ECAD Model:
Datasheet:
IPB100N10S305ATMA1

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Specifications
Infineon Technologies IPB100N10S305ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB100N10S305ATMA1.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    OptiMOS™
  • Published
    2008
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    300W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    34 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    4.8m Ω @ 100A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 240μA
  • Halogen Free
    Halogen Free
  • Input Capacitance (Ciss) (Max) @ Vds
    11570pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    100A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    176nC @ 10V
  • Rise Time
    17ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    60 ns
  • Continuous Drain Current (ID)
    100A
  • Gate to Source Voltage (Vgs)
    20V
  • Max Dual Supply Voltage
    100V
  • Drain-source On Resistance-Max
    0.0048Ohm
  • Pulsed Drain Current-Max (IDM)
    400A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead
Description
IPB100N10S305ATMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11570pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 34 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 100V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IPB100N10S305ATMA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.


IPB100N10S305ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N10S305ATMA1 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPB100N10S305ATMA1 More Descriptions
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 100V 100A TO263-3
100V, N-Ch, 4.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHSInfineon SCT
Single N-Channel 100 V 4.8 mOhm 135 nC OptiMOS™ Power Mosfet - D2PAK
Power Field-Effect Transistor, 100A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
Product Comparison
The three parts on the right have similar specifications to IPB100N10S305ATMA1.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Halogen Free
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    RoHS Status
    Lead Free
    Weight
    Number of Channels
    Element Configuration
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Height
    REACH SVHC
    Surface Mount
    Pbfree Code
    Subcategory
    Pin Count
    Qualification Status
    Transistor Application
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IPB100N10S305ATMA1
    IPB100N10S305ATMA1
    14 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2008
    e3
    Not For New Designs
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    300W Tc
    ENHANCEMENT MODE
    300W
    DRAIN
    34 ns
    N-Channel
    4.8m Ω @ 100A, 10V
    4V @ 240μA
    Halogen Free
    11570pF @ 25V
    100A Tc
    176nC @ 10V
    17ns
    10V
    ±20V
    20 ns
    60 ns
    100A
    20V
    100V
    0.0048Ohm
    400A
    ROHS3 Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB100N10S3-05
    -
    -
    -
    PG-TO263-3
    -
    -
    -
    Tape & Reel (TR)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB117N20NFDATMA1
    13 Weeks
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Cut Tape (CT)
    OptiMOS™
    2013
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    R-PSSO-G2
    1
    -
    300W Tc
    ENHANCEMENT MODE
    300W
    DRAIN
    13 ns
    N-Channel
    11.7m Ω @ 84A, 10V
    4V @ 270μA
    Halogen Free
    6650pF @ 100V
    84A Tc
    87nC @ 10V
    10ns
    10V
    ±20V
    8 ns
    24 ns
    84A
    20V
    200V
    -
    -
    ROHS3 Compliant
    Contains Lead
    1.946308g
    1
    Single
    3V
    200V
    175°C
    4.82mm
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IPB136N08N3 G
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    OptiMOS™
    2011
    e3
    Obsolete
    1 (Unlimited)
    2
    EAR99
    MATTE TIN
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    260
    compliant
    40
    R-PSSO-G2
    1
    SINGLE WITH BUILT-IN DIODE
    79W Tc
    ENHANCEMENT MODE
    -
    DRAIN
    -
    N-Channel
    13.6m Ω @ 45A, 10V
    3.5V @ 33μA
    -
    1730pF @ 40V
    45A Tc
    25nC @ 10V
    -
    6V 10V
    ±20V
    -
    -
    -
    -
    -
    0.0136Ohm
    180A
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    YES
    yes
    FET General Purpose Power
    4
    Not Qualified
    SWITCHING
    80V
    45A
    80V
    50 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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