Infineon Technologies IPB100N10S305ATMA1
- Part Number:
- IPB100N10S305ATMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586595-IPB100N10S305ATMA1
- Description:
- MOSFET N-CH 100V 100A TO263-3
- Datasheet:
- IPB100N10S305ATMA1
Infineon Technologies IPB100N10S305ATMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB100N10S305ATMA1.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Published2008
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max300W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- Case ConnectionDRAIN
- Turn On Delay Time34 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.8m Ω @ 100A, 10V
- Vgs(th) (Max) @ Id4V @ 240μA
- Halogen FreeHalogen Free
- Input Capacitance (Ciss) (Max) @ Vds11570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs176nC @ 10V
- Rise Time17ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time60 ns
- Continuous Drain Current (ID)100A
- Gate to Source Voltage (Vgs)20V
- Max Dual Supply Voltage100V
- Drain-source On Resistance-Max0.0048Ohm
- Pulsed Drain Current-Max (IDM)400A
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IPB100N10S305ATMA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11570pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 34 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 100V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB100N10S305ATMA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.
IPB100N10S305ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N10S305ATMA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 11570pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 60 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 34 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 100V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPB100N10S305ATMA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.
IPB100N10S305ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N10S305ATMA1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IPB100N10S305ATMA1 More Descriptions
Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2 Tab) D2PAK T/R / MOSFET N-CH 100V 100A TO263-3
100V, N-Ch, 4.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHSInfineon SCT
Single N-Channel 100 V 4.8 mOhm 135 nC OptiMOS Power Mosfet - D2PAK
Power Field-Effect Transistor, 100A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
100V, N-Ch, 4.8 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T, PG-TO263-3, RoHSInfineon SCT
Single N-Channel 100 V 4.8 mOhm 135 nC OptiMOS Power Mosfet - D2PAK
Power Field-Effect Transistor, 100A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.004ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V;
Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting
The three parts on the right have similar specifications to IPB100N10S305ATMA1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdHalogen FreeInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)RoHS StatusLead FreeWeightNumber of ChannelsElement ConfigurationThreshold VoltageDrain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightREACH SVHCSurface MountPbfree CodeSubcategoryPin CountQualification StatusTransistor ApplicationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IPB100N10S305ATMA114 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2008e3Not For New Designs1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODE300W TcENHANCEMENT MODE300WDRAIN34 nsN-Channel4.8m Ω @ 100A, 10V4V @ 240μAHalogen Free11570pF @ 25V100A Tc176nC @ 10V17ns10V±20V20 ns60 ns100A20V100V0.0048Ohm400AROHS3 CompliantContains Lead-------------------
-
---PG-TO263-3---Tape & Reel (TR)---------------------------------------RoHS Compliant-------------------
-
13 WeeksSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3SILICON-55°C~175°C TJCut Tape (CT)OptiMOS™2013e3Active1 (Unlimited)2EAR99Tin (Sn)MOSFET (Metal Oxide)-GULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21-300W TcENHANCEMENT MODE300WDRAIN13 nsN-Channel11.7m Ω @ 84A, 10V4V @ 270μAHalogen Free6650pF @ 100V84A Tc87nC @ 10V10ns10V±20V8 ns24 ns84A20V200V--ROHS3 CompliantContains Lead1.946308g1Single3V200V175°C4.82mmNo SVHC----------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)OptiMOS™2011e3Obsolete1 (Unlimited)2EAR99MATTE TINMOSFET (Metal Oxide)SINGLEGULL WING260compliant40R-PSSO-G21SINGLE WITH BUILT-IN DIODE79W TcENHANCEMENT MODE-DRAIN-N-Channel13.6m Ω @ 45A, 10V3.5V @ 33μA-1730pF @ 40V45A Tc25nC @ 10V-6V 10V±20V-----0.0136Ohm180ARoHS Compliant---------YESyesFET General Purpose Power4Not QualifiedSWITCHING80V45A80V50 mJ
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