Infineon Technologies IPB100N06S3-04
- Part Number:
- IPB100N06S3-04
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071724-IPB100N06S3-04
- Description:
- MOSFET N-CH 55V 100A TO-263
- ECAD Model:
-
- Datasheet:
- IP(B,I,P)100N06S3-04
Infineon Technologies IPB100N06S3-04 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPB100N06S3-04.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackagePG-TO263-3-2
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesOptiMOS™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max214W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs4.1mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id4V @ 150μA
- Input Capacitance (Ciss) (Max) @ Vds14.23pF @ 25V
- Current - Continuous Drain (Id) @ 25°C100A Tc
- Gate Charge (Qg) (Max) @ Vgs314nC @ 10V
- Drain to Source Voltage (Vdss)55V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPB100N06S3-04 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 14.23pF @ 25V maximal input capacitance.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB100N06S3-04 Features
a 55V drain to source voltage (Vdss)
IPB100N06S3-04 Applications
There are a lot of Rochester Electronics, LLC
IPB100N06S3-04 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 14.23pF @ 25V maximal input capacitance.To operate this transistor, you will need a 55V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPB100N06S3-04 Features
a 55V drain to source voltage (Vdss)
IPB100N06S3-04 Applications
There are a lot of Rochester Electronics, LLC
IPB100N06S3-04 applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IPB100N06S3-04 More Descriptions
MOSFET N-CH 55V 100A TO-263
OPTLMOS N-CHANNEL POWER MOSFET
TO263-3/AUTOMOTIVE MOS TRANSISTO
OPTLMOS N-CHANNEL POWER MOSFET
TO263-3/AUTOMOTIVE MOS TRANSISTO
The three parts on the right have similar specifications to IPB100N06S3-04.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusFactory Lead TimeMountNumber of PinsTransistor Element MaterialPublishedJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeHalogen FreeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Lead FreeAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingPin CountQualification StatusElement ConfigurationDrain to Source Breakdown VoltageAvalanche Energy Rating (Eas)View Compare
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IPB100N06S3-04Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABPG-TO263-3-2-55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)214W TcN-Channel4.1mOhm @ 80A, 10V4V @ 150μA14.23pF @ 25V100A Tc314nC @ 10V55V10V±20VROHS3 Compliant----------------------------------------- -
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™Not For New Designs1 (Unlimited)MOSFET (Metal Oxide)300W TcN-Channel4.8m Ω @ 100A, 10V4V @ 240μA11570pF @ 25V100A Tc176nC @ 10V-10V±20VROHS3 Compliant14 WeeksSurface Mount3SILICON2008e32EAR99Tin (Sn)SINGLEGULL WINGNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PSSO-G21SINGLE WITH BUILT-IN DIODEENHANCEMENT MODE300WDRAIN34 nsHalogen Free17ns20 ns60 ns100A20V100V0.0048Ohm400AContains Lead---------
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Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)OptiMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)300W TcN-Channel3m Ω @ 80A, 10V4V @ 230μA21620pF @ 25V100A Tc480nC @ 10V-10V±20VRoHS Compliant-Surface Mount-SILICON2007e32EAR99MATTE TIN-GULL WING260-40R-PSSO-G21-ENHANCEMENT MODE300WDRAIN--67ns60 ns77 ns100A20V-0.003Ohm400ALead FreeAVALANCHE RATEDFET General Purpose Power55V100A4Not QualifiedSingle55V2390 mJ
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-PG-TO263-3--Tape & Reel (TR)--------------RoHS Compliant----------------------------------------
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