Infineon Technologies IPB100N06S205ATMA1

IPB100N06S205ATMA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5110pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 100A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 55V in order to maintain normal operation.Operating this transistor requires a 55V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IPB100N06S205ATMA1 Features
the avalanche energy rating (Eas) is 810 mJ
based on its rated peak drain current 400A.
a 55V drain to source voltage (Vdss)


IPB100N06S205ATMA1 Applications
There are a lot of Infineon Technologies
IPB100N06S205ATMA1 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools