Fairchild/ON Semiconductor FDMS86322

Name: FDMS86322
Brand: Fairchild/ON Semiconductor
SKU: 2482062-FDMS86322
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS86322

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2482062-FDMS86322

Description:: MOSFET N-CH 80V 60A LL POWER56

ECAD Model:

Datasheet:: FDMS86322

Specifications

Fairchild/ON Semiconductor FDMS86322 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86322.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 104W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
104W
Case Connection
DRAIN
Turn On Delay Time
15 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
7.65m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3000pF @ 50V
Current - Continuous Drain (Id) @ 25°C
13A Ta 60A Tc
Gate Charge (Qg) (Max) @ Vgs
55nC @ 10V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
13 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
13A
Threshold Voltage
2.9V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
60A
Drain-source On Resistance-Max
0.00765Ohm
Drain to Source Breakdown Voltage
80V
Pulsed Drain Current-Max (IDM)
200A
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRFR220NTRPBF Description The IRFR220NTRPBF is a HEXFET? single N-channel Power MOSFET that offers a low gate-to-drain charge to reduce switching losses. It is suitable for high-frequency DC-to-DC converters.

IRFR220NTRPBF Benefits Fully characterized capacitance including effective COSS to simplify the design Fully characterized avalanche voltage and current Low static drain-to-source ON-resistance Dynamic dV/dt rating

IRFR220NTRPBF Applications Power Management

FDMS86322 More Descriptions

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 60A, 7.65mΩ
N-Channel 80 V 7.65 mO 55 nC SMT PowerTrench® Mosfet - PQFN-8
Power Field-Effect Transistor, 13A I(D), 80V, 0.00765ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N CH, 80V, 60A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:80V; On Resistance Rds(on):0.0061ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.9V; Power Dissipation Pd:104W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMS86322.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Resistance

Nominal Vgs

Lead Free

Avalanche Energy Rating (Eas)

FET Feature

Contact Plating

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

View Compare
FDMS86322

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

10 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2010

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 104W Tc

Single

ENHANCEMENT MODE

104W

DRAIN

15 ns

N-Channel

SWITCHING

7.65m Ω @ 13A, 10V

4V @ 250μA

3000pF @ 50V

13A Ta 60A Tc

55nC @ 10V

20ns

6V 10V

±20V

13 ns

27 ns

13A

2.9V

MO-240AA

20V

60A

0.00765Ohm

80V

200A

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-
FDMS7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2007

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

-

R-PDSO-N5

1

2.5W Ta 78W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

17 ns

N-Channel

SWITCHING

2.8m Ω @ 25A, 10V

3V @ 250μA

5565pF @ 15V

25A Ta 42A Tc

84nC @ 10V

9ns

4.5V 10V

±20V

7 ns

37 ns

25A

1.9V

MO-240AA

20V

-

-

30V

-

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

2.8MOhm

1.9 V

Lead Free

-

-

-

-

-

-

FDMS86322 vs FDMS7660
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

2017

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

3.3W Ta 59W Tc

Single

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

1.5V

MO-240AA

12V

-

-

25V

100A

-

-

-

No SVHC

No

RoHS Compliant

-

-

-

45 mJ

Schottky Diode (Body)

-

-

-

-

FDMS86322 vs FDMS8570SDC
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

e3

yes

Active

1 (Unlimited)

5

EAR99

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

R-PDSO-F5

1

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

-

MO-240AA

20V

22A

0.005Ohm

30V

100A

1mm

6mm

5mm

-

-

ROHS3 Compliant

-

-

-

33 mJ

-

Tin

NOT SPECIFIED

not_compliant

NOT SPECIFIED

FDMS86322 vs FDMS0312AS