STMicroelectronics STP30N10F7

Name: STP30N10F7
Brand: STMicroelectronics
SKU: 2849852-STP30N10F7
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP30N10F7

Manufacturer:: STMicroelectronics

Ventron No:: 2849852-STP30N10F7

Description:: MOSFET N-CH 100V 30A TO220

ECAD Model:

Datasheet:: STP30N10F7

Specifications

STMicroelectronics STP30N10F7 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP30N10F7.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
37 Weeks
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP30N
Power Dissipation-Max
50W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
24m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1270pF @ 50V
Current - Continuous Drain (Id) @ 25°C
32A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP30N10F7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1270pF @ 50V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STP30N10F7 Features
a 100V drain to source voltage (Vdss)

STP30N10F7 Applications
There are a lot of STMicroelectronics
STP30N10F7 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

STP30N10F7 More Descriptions

N-channel 100 V, 0.02 Ohm typ., 32 A STripFET F7 Power MOSFET in a TO-220 package
Trans MOSFET N-CH 100V 32A 3-Pin(3 Tab) TO-220AB Tube
Mosfet, N-Ch, 100V, 32A, To-220 Rohs Compliant: Yes |Stmicroelectronics STP30N10F7
N-Channel 100 V 3 A Flange Mount Power MosFet -TO-220-3

Product Comparison

The three parts on the right have similar specifications to STP30N10F7.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lead Free

Mount

Number of Pins

Transistor Element Material

JESD-609 Code

Number of Terminations

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

REACH SVHC

Radiation Hardening

Reach Compliance Code

JESD-30 Code

Qualification Status

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

View Compare
STP30N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

37 Weeks

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

STripFET™

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP30N

50W Tc

N-Channel

24m Ω @ 16A, 10V

4.5V @ 250μA

1270pF @ 50V

32A Tc

19nC @ 10V

100V

10V

±20V

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP30NF20

STMicroelectronics

-

-

-

TO220

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP30N10F7 vs STP30NF20
STP36NF06L

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

12 Weeks

Through Hole

TO-220-3

-55°C~175°C TJ

Tube

STripFET™ II

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

STP36N

70W Tc

N-Channel

40m Ω @ 15A, 10V

2.5V @ 250μA

660pF @ 25V

30A Tc

17nC @ 5V

-

5V 10V

±18V

ROHS3 Compliant

Lead Free

Through Hole

3

SILICON

e3

3

32mOhm

Matte Tin (Sn)

FET General Purpose Power

60V

30A

3

1

Single

ENHANCEMENT MODE

70W

DRAIN

10 ns

SWITCHING

80ns

13 ns

19 ns

30A

2.5V

TO-220AB

18V

60V

225 mJ

9.15mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

-

-

STP30N10F7 vs STP36NF06L
STP3NB100

STMicroelectronics

-

-

Through Hole

TO-220-3

150°C TJ

Tube

PowerMESH™

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP3N

100W Tc

N-Channel

6 Ω @ 1.5A, 10V

4V @ 250μA

700pF @ 25V

3A Tc

30nC @ 10V

1000V

10V

±30V

Non-RoHS Compliant

Contains Lead

Through Hole

-

SILICON

e3

3

-

Matte Tin (Sn)

FET General Purpose Power

1kV

3A

3

1

Single

ENHANCEMENT MODE

100W

-

-

SWITCHING

12ns

28 ns

-

3A

-

TO-220AB

30V

1kV

244 mJ

-

-

-

-

-

not_compliant

R-PSFM-T3

Not Qualified

3A

6Ohm

12A

STP30N10F7 vs STP3NB100