STMicroelectronics STP36N55M5

Name: STP36N55M5
Brand: STMicroelectronics
SKU: 3585938-STP36N55M5
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP36N55M5

Manufacturer:: STMicroelectronics

Ventron No:: 3585938-STP36N55M5

Description:: MOSFET N CH 550V 33A TO-220

ECAD Model:

Datasheet:: STx36N55M5

Specifications

STMicroelectronics STP36N55M5 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP36N55M5.

Factory Lead Time
17 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ V
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP36N
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Case Connection
DRAIN
Turn On Delay Time
56 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
80m Ω @ 16.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2670pF @ 100V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
62nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Turn-Off Delay Time
56 ns
Continuous Drain Current (ID)
33A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.08Ohm
Drain to Source Breakdown Voltage
550V
Height
15.75mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP36N55M5 Description STP36N55M5 N-channel MOSFET is based on an original, unique vertical structure. STP36N55M5 MOSFET results in a dramatic reduction in the on-resistance and ultra-low gate charges for applications that require high power density and efficiency. STP36N55M5 STMicroelectronics is utilized in Switching applications. STP36N55M5 Features Low gate charge and input capacitance Extremely low RDS(on) 100% avalanche tested Excellent switching performance STP36N55M5 Applications Notebook PC Synchronous Buck Notebook Vcore and Server Notebook Battery Pack Load Switch

STP36N55M5 More Descriptions

N-channel 550 V, 0.06 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-220 package
Trans MOSFET N-CH 550V 33A 3-Pin(3 Tab) TO-220AB Tube
Single N-Channel 600 V 190 W 62 nC Silicon Through Hole Mosfet - TO-220-3
Power Field-Effect Transistor, 33A I(D), 550V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Mosfet, N-Ch, 550V, 33A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP36N55M5

Product Comparison

The three parts on the right have similar specifications to STP36N55M5.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

JESD-609 Code

Resistance

Terminal Finish

Voltage - Rated DC

Current Rating

Pin Count

Rise Time

Fall Time (Typ)

Threshold Voltage

Avalanche Energy Rating (Eas)

REACH SVHC

Pbfree Code

Pulsed Drain Current-Max (IDM)

Nominal Vgs

View Compare
STP36N55M5

STMicroelectronics

17 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ V

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP36N

1

190W Tc

Single

ENHANCEMENT MODE

190W

DRAIN

56 ns

N-Channel

SWITCHING

80m Ω @ 16.5A, 10V

5V @ 250μA

2670pF @ 100V

33A Tc

62nC @ 10V

10V

±25V

56 ns

33A

TO-220AB

25V

0.08Ohm

550V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP30NF20

STMicroelectronics

-

-

-

TO220

-

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP36N55M5 vs STP30NF20
STP36NF06L

STMicroelectronics

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

Active

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP36N

1

70W Tc

Single

ENHANCEMENT MODE

70W

DRAIN

10 ns

N-Channel

SWITCHING

40m Ω @ 15A, 10V

2.5V @ 250μA

660pF @ 25V

30A Tc

17nC @ 5V

5V 10V

±18V

19 ns

30A

TO-220AB

18V

-

60V

9.15mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

e3

32mOhm

Matte Tin (Sn)

60V

30A

3

80ns

13 ns

2.5V

225 mJ

No SVHC

-

-

-

STP36N55M5 vs STP36NF06L
STP3N62K3

STMicroelectronics

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH3™

Obsolete

1 (Unlimited)

3

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP3N

1

45W Tc

Single

ENHANCEMENT MODE

45W

-

9 ns

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

10V

±30V

22 ns

2.7A

TO-220AB

30V

-

620V

15.75mm

10.4mm

4.6mm

No

ROHS3 Compliant

Lead Free

-

e3

2.5Ohm

Matte Tin (Sn)

-

-

3

6.8ns

15.6 ns

-

100 mJ

No SVHC

yes

10.8A

3.75 V

STP36N55M5 vs STP3N62K3