STMicroelectronics STP33N65M2

Name: STP33N65M2
Brand: STMicroelectronics
SKU: 3585956-STP33N65M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP33N65M2

Manufacturer:: STMicroelectronics

Ventron No:: 3585956-STP33N65M2

Description:: MOSFET N-CH 650V 24A TO220

ECAD Model:

Datasheet:: STP33N65M2

Specifications

STMicroelectronics STP33N65M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP33N65M2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ M2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Base Part Number
STP33N
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
13.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
140m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1790pF @ 100V
Current - Continuous Drain (Id) @ 25°C
24A Tc
Gate Charge (Qg) (Max) @ Vgs
41.5nC @ 10V
Drain to Source Voltage (Vdss)
650V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Turn-Off Delay Time
72.5 ns
Continuous Drain Current (ID)
24A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain-source On Resistance-Max
0.14Ohm
Pulsed Drain Current-Max (IDM)
96A
DS Breakdown Voltage-Min
650V
Avalanche Energy Rating (Eas)
780 mJ
Height
15.75mm
Length
10.4mm
Width
4.6mm
RoHS Status
ROHS3 Compliant

Description

STP33N65M2 Description
MDmeshTM M2 technology was used to build STP33N65M2, which are N-channel Power MOSFETs. The devices have low on-resistance and optimal switching characteristics due to their strip layout and improved vertical structure, making them suited for the most demanding high efficiency converters.

STP33N65M2 Features
? The gate charge is really inexpensive.
? The output capacitance (Coss) profile is excellent.
? Avalanche-proofed to the nth degree
? Protected by a zener

STP33N65M2 Applications
Switching applications

STP33N65M2 More Descriptions

N-channel 650 V, 0.117 Ohm typ., 24 A MDmesh M2 Power MOSFET in TO-220 package
N-Channel 650 V 140 mOhm Flange Mount MDmesh M2 Power Mosfet - TO-220
Trans MOSFET N-CH 650V 24A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 24A I(D), 650V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP33N65M2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Technology

Base Part Number

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Height

Length

Width

RoHS Status

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Lead Free

JESD-609 Code

Pbfree Code

Resistance

Terminal Finish

Subcategory

Pin Count

Power Dissipation

Rise Time

Fall Time (Typ)

Drain to Source Breakdown Voltage

Nominal Vgs

REACH SVHC

Radiation Hardening

View Compare
STP33N65M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

MDmesh™ M2

Active

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

STP33N

1

190W Tc

Single

ENHANCEMENT MODE

DRAIN

13.5 ns

N-Channel

SWITCHING

140m Ω @ 12A, 10V

4V @ 250μA

1790pF @ 100V

24A Tc

41.5nC @ 10V

650V

10V

±25V

72.5 ns

24A

TO-220AB

25V

0.14Ohm

96A

650V

780 mJ

15.75mm

10.4mm

4.6mm

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP30NF20

STMicroelectronics

-

-

-

-

TO220

-

-

-

Tube-packed

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP33N65M2 vs STP30NF20
STP30N10F7

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

37 Weeks

-

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

STripFET™

Active

1 (Unlimited)

-

EAR99

MOSFET (Metal Oxide)

STP30N

-

50W Tc

-

-

-

-

N-Channel

-

24m Ω @ 16A, 10V

4.5V @ 250μA

1270pF @ 50V

32A Tc

19nC @ 10V

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

NOT SPECIFIED

NOT SPECIFIED

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

STP33N65M2 vs STP30N10F7
STP3N62K3

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH3™

Obsolete

1 (Unlimited)

3

EAR99

MOSFET (Metal Oxide)

STP3N

1

45W Tc

Single

ENHANCEMENT MODE

-

9 ns

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

-

10V

±30V

22 ns

2.7A

TO-220AB

30V

-

10.8A

-

100 mJ

15.75mm

10.4mm

4.6mm

ROHS3 Compliant

-

-

Lead Free

e3

yes

2.5Ohm

Matte Tin (Sn)

FET General Purpose Power

3

45W

6.8ns

15.6 ns

620V

3.75 V

No SVHC

No

STP33N65M2 vs STP3N62K3