STMicroelectronics STP3NB100

Name: STP3NB100
Brand: STMicroelectronics
SKU: 2851521-STP3NB100
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP3NB100

Manufacturer:: STMicroelectronics

Ventron No:: 2851521-STP3NB100

Description:: MOSFET N-CH 1KV 3A TO-220

ECAD Model:

Datasheet:: STP3NB100(FP)

Specifications

STMicroelectronics STP3NB100 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP3NB100.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
1kV
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
3A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP3N
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
100W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
100W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
6 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3A Tc
Gate Charge (Qg) (Max) @ Vgs
30nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
1000V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
28 ns
Continuous Drain Current (ID)
3A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain Current-Max (Abs) (ID)
3A
Drain-source On Resistance-Max
6Ohm
Drain to Source Breakdown Voltage
1kV
Pulsed Drain Current-Max (IDM)
12A
Avalanche Energy Rating (Eas)
244 mJ
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead

Description

STP3NB100 Description
The STP3NB100 PowerMesh? MOSFET uses the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

STP3NB100 Features
Typical RDS(on)=5.3Ω
Extremely high dv/dt capability
100% avalanche tested
very low intrinsic capacitances
Gate charge minimized

STP3NB100 Applications
Switch-mode power supplies (SMPS)
DC-AC converters for welding equipment
High current, high-speed switching

STP3NB100 More Descriptions

MOSFET N-CH 1KV 3A TO-220
Power Field-Effect Transistor, 3A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
French Electronic Distributor since 1988
VERY HIGH ACCURACY (25 UV) HIGH

Product Comparison

The three parts on the right have similar specifications to STP3NB100.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Number of Pins

Resistance

Case Connection

Turn On Delay Time

Turn-Off Delay Time

Threshold Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

Lifecycle Status

Factory Lead Time

Pbfree Code

Nominal Vgs

View Compare
STP3NB100

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

PowerMESH™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

1kV

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

3A

NOT SPECIFIED

STP3N

3

R-PSFM-T3

Not Qualified

1

100W Tc

Single

ENHANCEMENT MODE

100W

N-Channel

SWITCHING

6 Ω @ 1.5A, 10V

4V @ 250μA

700pF @ 25V

3A Tc

30nC @ 10V

12ns

1000V

10V

±30V

28 ns

3A

TO-220AB

30V

3A

6Ohm

1kV

12A

244 mJ

Non-RoHS Compliant

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP35N65M5

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

MDmesh™ V

e3

Obsolete

Not Applicable

3

-

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP35N

3

-

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

N-Channel

SWITCHING

98m Ω @ 13.5A, 10V

5V @ 250μA

3750pF @ 100V

27A Tc

83nC @ 10V

12ns

-

10V

±25V

16 ns

27A

TO-220AB

25V

-

-

650V

-

800 mJ

ROHS3 Compliant

Lead Free

3

98MOhm

ISOLATED

60 ns

60 ns

4V

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

-

-

STP3NB100 vs STP35N65M5
STP30N10F7

STMicroelectronics

-

Through Hole

TO-220-3

-

-55°C~175°C TJ

Tube

STripFET™

-

Active

1 (Unlimited)

-

EAR99

-

-

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

-

NOT SPECIFIED

STP30N

-

-

-

-

50W Tc

-

-

-

N-Channel

-

24m Ω @ 16A, 10V

4.5V @ 250μA

1270pF @ 50V

32A Tc

19nC @ 10V

-

100V

10V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

ACTIVE (Last Updated: 7 months ago)

37 Weeks

-

-

STP3NB100 vs STP30N10F7
STP3N62K3

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

150°C TJ

Tube

SuperMESH3™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP3N

3

-

-

1

45W Tc

Single

ENHANCEMENT MODE

45W

N-Channel

SWITCHING

2.5 Ω @ 1.4A, 10V

4.5V @ 50μA

385pF @ 25V

2.7A Tc

13nC @ 10V

6.8ns

-

10V

±30V

15.6 ns

2.7A

TO-220AB

30V

-

-

620V

10.8A

100 mJ

ROHS3 Compliant

Lead Free

3

2.5Ohm

-

9 ns

22 ns

-

15.75mm

10.4mm

4.6mm

No SVHC

No

-

-

yes

3.75 V

STP3NB100 vs STP3N62K3